Nitride based semiconductor laser diode

• US 20070183469A1
• Filed: 08/18/2006
• Published: 08/09/2007
• Est. Priority Date: 02/08/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ryu, Han-youl
• Application Number:
  US11/505,874
• Publication Number:
  US 20070183469A1
• Time in Patent Office: Days
• US Class Current: 372/43.10
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 2301/18 Semiconductor lasers with special structural design for influencing the near- or far-field
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/2004 Confining in the direction perpendicular to the layer structure
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/2018 Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
• CPC Class Codes: H01S 5/2031 characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/3213 asymmetric clading layers
• CPC Class Codes: H01S 5/3216 quantum well or superlattice cladding layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A nitride based semiconductor laser diode is provided. The nitride based semiconductor laser diode includes: a lower contact layer, a lower clad layer, an active layer, and an upper clad layer sequentially stacked on a substrate, wherein the refractive index of the lower clad layer is equal to or greater than the refractive index of the lower contact layer.

Claims

1. A nitride based semiconductor laser diode comprising:

a substrate;

a lower contact layer;

a lower clad layer;

an active layer; and

an upper clad layer sequentially stacked on the substrate,

wherein the refractive index of the lower clad layer is equal to or greater than the refractive index of the lower contact layer.

2. The nitride based semiconductor laser diode of claim 1, wherein the lower contact layer is formed of Al_xGa_1-xN, and the lower clad layer is formed of Al_yGa_1-yN, and the average composition of Al is in the range of 0≦

y≦

x≦

0.1.

3. The nitride based semiconductor laser diode of claim 2, wherein the lower clad layer has a single layer structure or a multi layer structure in which layers having different compositions of Al are alternately stacked.

4. The nitride based semiconductor laser diode of claim 1, wherein the lower contact layer is formed of Al_xGa_1-xN, and the lower clad layer is formed of In_yGa_1-yN, and the average composition of Al is in the range of 0≦

x≦

0.1, and the average composition of In is in the range of 0≦

y≦

0.1.

5. The nitride based semiconductor laser diode of claim 4, wherein the lower clad layer has a single layer structure or a multi layer structure in which layers having different compositions of In are alternately stacked.

6. The nitride based semiconductor laser diode of claim 1, wherein the substrate is a sapphire substrate.

11. The nitride based semiconductor laser diode of claim 1, wherein a layer between the active layer and the substrate is formed of an n-type semiconductor, and the upper clad layer is formed of a p-type semiconductor.

7. A nitride based semiconductor laser diode comprising:

a substrate;

a lower clad layer;

an active layer; and

an upper clad layer sequentially stacked on the substrate,

wherein the refractive index of the lower clad layer is equal to or greater than the refractive index of the substrate.

8. The nitride based semiconductor laser diode of claim 7, wherein the lower clad layer is formed of In_xGa_1-xN, and the average composition of In is in the range of 0≦

y≦

0.1.

9. The nitride based semiconductor laser diode of claim 8, wherein the lower clad layer has a single layer structure or a multi layer structure in which layers having different composition of In are alternately stacked.

10. The nitride based semiconductor laser diode of claim 7, wherein the substrate is formed of GaN.