Method of manufacturing gallium nitride based light emitting diode
First Claim
1. A method of manufacturing a GaN-based LED comprising:
- forming an n-type GaN layer on a substrate;
forming an active layer on the n-type GaN layer;
forming a p-type GaN layer on the active layer;
mesa-etching portions of the p-type GaN layer and the active layer so as to expose a portion of the n-type GaN layer;
forming an irregularities forming layer on the p-type GaN layer;
forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer;
selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities;
forming a p-electrode on the p-type GaN layer having the surface irregularities formed thereon; and
forming an n-electrode on the exposed n-type GaN layer.
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Accused Products
Abstract
Provided a method of manufacturing a GaN-based LED comprising forming an n-type GaN layer on a substrate; forming an active layer on the n-type GaN layer; forming a p-type GaN layer on the active layer; mesa-etching portions of the p-type GaN layer and the active layer so as to expose a portion of the n-type GaN layer; forming an irregularities forming layer on the p-type GaN layer; forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer; selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities; forming a p-electrode on the p-type GaN layer having the surface irregularities formed thereon; and forming an n-electrode on the exposed n-type GaN layer.
48 Citations
7 Claims
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1. A method of manufacturing a GaN-based LED comprising:
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forming an n-type GaN layer on a substrate; forming an active layer on the n-type GaN layer; forming a p-type GaN layer on the active layer; mesa-etching portions of the p-type GaN layer and the active layer so as to expose a portion of the n-type GaN layer; forming an irregularities forming layer on the p-type GaN layer; forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer; selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities; forming a p-electrode on the p-type GaN layer having the surface irregularities formed thereon; and forming an n-electrode on the exposed n-type GaN layer. - View Dependent Claims (2, 3)
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4. A method of manufacturing a GaN-based LED comprising:
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sequentially forming an n-type GaN layer, an active layer, a p-type GaN layer on a substrate, thereby forming a GaN-based LED structure; forming a p-electrode on the GaN-based LED structure; bonding a conductive substrate on the p-electrode; removing the substrate through an LLO process so as to expose the n-type GaN layer; forming an irregularities forming layer on the n-type GaN layer which is exposed by removing the substrate; forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer; selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities; and forming an n-electrode on the n-type GaN layer having the surface irregularities formed thereon. - View Dependent Claims (5, 6, 7)
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Specification
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- Resources
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Current AssigneeSamsung LED Co., Ltd. (Samsung Electronics Co. Ltd.)
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Original AssigneeSamsung Electronics Co. Ltd.
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InventorsKim, Dae Yeon, Yoon, Sang Ho, Hwang, Sung Min, Lee, Jin Bock
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Application NumberUS11/646,406Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current438/22CPC Class CodesH01L 33/22 Roughened surfaces, e.g. at...H01L 33/44 characterised by the coatin...
