SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20070184665A1
• Filed: 04/02/2007
• Published: 08/09/2007
• Est. Priority Date: 01/26/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 8,017,456 B2
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 2203/02 reflective
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 29/78633 with a light shield

Abstract

The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a gate wiring and a source wiring. In locations for shielding TFTs, a high pixel aperture ratio is realized by forming a color filter (red, or lamination of red and blue), formed on an opposing substrate.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a semiconductor layer over a substrate;

forming a gate insulating film over the semiconductor layer; and

forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma.

7. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the semiconductor layer contains crystalline silicon.

8. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein a gate electrode is formed at a same step as the source wiring.

9. A method for manufacturing a semiconductor device according to claim 8, wherein the gate electrode comprises one selected from the group consisting of poly-Si, W, WSi_X, Al, Cu, Ta, Cr and Mo.

10. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, further comprising a step of forming an interlayer insulating film over the source wiring.

11. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the conductive film contains a lamination of Ta film and W film, a lamination of TaN film and Al film, or a lamination of TaN film and Cu film.

12. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the etching is conducted in a mixed gas of CF₄ and Cl₂.

13. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the semiconductor film is one selected from the group consisting of a personal computer, a video camera, a mobile computer, a head mounted type display, a player using a recording medium, a digital camera, and a projector.

2. A method for manufacturing a semiconductor device comprising:

forming a semiconductor layer over a substrate;

forming a gate insulating film over the semiconductor layer; and

forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma, wherein the source wiring includes a tapered portion.

3. A method for manufacturing a semiconductor device comprising:

forming a semiconductor layer over a substrate;

forming a gate insulating film over the semiconductor layer; and

forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma at least twice.

4. A method for manufacturing a semiconductor device comprising:

forming a semiconductor layer over a substrate;

forming a gate insulating film over the semiconductor layer;

forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma; and

electrically connecting the source wiring and the semiconductor layer.

5. A method for manufacturing a semiconductor device comprising:

forming a semiconductor layer over a substrate;

forming a gate insulating film over the semiconductor layer;

forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma, wherein the wiring includes a tapered portion; and

electrically connecting the source wiring and the semiconductor layer.

6. A method for manufacturing a semiconductor device comprising:

forming a semiconductor layer over a substrate;

forming a gate insulating film over the semiconductor layer;

forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma at least twice; and

electrically connecting the source wiring and the semiconductor layer.