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Plasma processing reactor with multiple capacitive and inductive power sources

  • US 20070186855A1
  • Filed: 02/15/2006
  • Published: 08/16/2007
  • Est. Priority Date: 02/15/2006
  • Status: Active Grant
First Claim
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1. A plasma processing chamber configured to generate a plasma, comprising:

  • a bottom electrode assembly with an inner bottom electrode and an outer bottom electrode disposed outside of the inner bottom electrode, wherein the inner bottom electrode is configured to receive a substrate; and

    a top electrode assembly with a top electrode, wherein the top capacitive electrode is disposed directly above the inner and outer bottom electrodes.

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