SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

• US 20070187363A1
• Filed: 02/12/2007
• Published: 08/16/2007
• Est. Priority Date: 02/13/2006
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Endoh, Shosuke, Denpoh, Kazuki, Shimizu, Akitaka, OKA, Hiromi
• Application Number:
  US11/673,948
• Publication Number:
  US 20070187363A1
• Time in Patent Office: Days
• US Class Current: 216/59
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

A substrate processing apparatus that enables a state of plasma over a substrate to be maintained in a desired state easily. A plasma processing apparatus 10 that has therein a camber 11, a stage 12, and a processing gas introducing nozzle 38 carries out etching on a wafer W. The chamber 11 houses the wafer W. The stage 12 is disposed in the chamber 11 and the wafer W is mounted thereon. The processing gas introducing nozzle 38 is a projecting body that projects out into the chamber 11, and has therein a plurality of processing gas introducing holes 56 that open out in different directions to one another.

Claims

1. A substrate processing apparatus for carrying out etching as plasma processing on a substrate, comprising a processing chamber in which the substrate is housed, a stage that is disposed in said processing chamber and on which the substrate is mounted, and at least one processing gas introducing unit that introduces a processing gas into said processing chamber;

wherein said processing gas introducing unit is a projecting body that projects out into said processing chamber, and has therein a plurality of processing gas introducing holes that open out in different directions to one another.

2. A substrate processing apparatus as claimed in claim 1, wherein said processing gas introducing holes are divided into at least two processing gas introducing hole groups;

and

a flow rate of the processing gas introduced into said processing chamber is controlled independently for each of said processing gas introducing hole groups.

3. A substrate processing apparatus as claimed in claim 1, wherein said processing gas introducing unit has a tip that is a hemispherical projecting body.

4. A substrate processing apparatus as claimed in claim 3, wherein said processing gas introducing holes are divided into a first processing gas introducing hole group and a second processing gas introducing hole group;

said first processing gas introducing hole group comprises ones of said processing gas introducing holes that open out within a region surrounded by a line of intersection where a cone that has its apex as a center of the hemisphere and broadens out toward said stage intersects with a surface of the hemisphere; and

said second processing gas introducing hole group comprises ones of said processing gas introducing holes that are not included in said first processing gas introducing hole group.

5. A substrate processing apparatus as claimed in claim 4, wherein the cone has an apex angle in a range of 120°

±

2°

.

6. A substrate processing apparatus as claimed in claim 3, wherein said processing gas introducing unit has an outer structure including a surface of the hemisphere, and an inner structure enclosed by said outer structure.

7. A substrate processing apparatus as claimed in claim 1, wherein the substrate has a polysilicon layer, and said etching etches the polysilicon layer.

8. A substrate processing method implemented by a substrate processing apparatus for carrying out etching as plasma processing on a substrate, including a processing chamber in which the substrate is housed, and at least one processing gas introducing unit that introduces a processing gas into the processing chamber, wherein the processing gas introducing unit is a projecting body that projects out into the processing chamber, and has therein a plurality of processing gas introducing holes that open out in different directions to one another, the processing gas introducing holes being divided into at least two processing gas introducing hole groups;

the substrate processing method comprising;

independently controlling a flow rate of the processing gas introduced into the processing chamber by each of the processing gas introducing hole groups.