PIXEL SENSOR STRUCTURE INCLUDING LIGHT PIPE AND METHOD FOR FABRICATION THEREOF

• US 20070187787A1
• Filed: 02/16/2006
• Published: 08/16/2007
• Est. Priority Date: 02/16/2006
• Status: Abandoned Application

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Ellis-Monaghan, John, Gambino, Jeffrey, Moon, Matthew, Jaffe, Mark, Leidy, Robert, Adkisson, James, Ackerson, Kristin, Passel, Richard, Hoague, Timothy
• Application Number:
  US11/276,160
• Publication Number:
  US 20070187787A1
• Time in Patent Office: Days
• US Class Current: 257/428
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

A pixel for an image sensor includes a photosensor located within a substrate. A patterned dielectric layer having an aperture registered with the photosensor is located over the substrate. A lens structure is located over the dielectric layer and also registered with the photosensor. A liner layer is located contiguously upon a top surface of the dielectric layer, and the sidewalls and bottom of the aperture. The liner layer provides for enhanced reflection for off-axis incoming light and enhanced capture thereof by the photosensor. When the aperture does not provide a dielectric layer border for a metallization layer embedded within the dielectric layer, an exposed edge of the metallization layer may be chamfered.

Claims

1. An image sensor pixel comprising:

a photosensitive element located within a substrate;

a patterned dielectric layer located over the substrate, the patterned dielectric layer having an aperture therein registered with the photosensitive element;

a liner material located upon a sidewall of the aperture; and

a lens structure located over the aperture and also registered with the photosensitive element, where the lens structure is designed to direct at least a portion of an electromagnetic radiation beam incident on the image sensor pixel to the liner material at an angle such that substantially all of the portion of the incident electromagnetic radiation beam is reflected off of the liner layer to the photosensitive element.

2. The image sensor pixel of claim 1 wherein the electromagnetic radiation beam is an off-axis electromagnetic radiation beam.

3. The image sensor pixel of claim 1 wherein the liner material comprises silicon nitride.

4. The image sensor pixel of claim 1 wherein the photosensitive element comprises a photodiode.

5. The image sensor pixel of claim 1 wherein the lens structure comprises a microlens.

6. The image sensor pixel of claim 1 wherein the angle is less than about a Brewster'"'"'s angle for the liner material.

7. An image sensor pixel comprising:

a photosensitive element located within a substrate;

a patterned dielectric layer located over the substrate, the patterned dielectric layer having an aperture therein registered with the photosensitive element;

a liner layer located conformally and contiguously upon the top surface of the patterned dielectric layer, the sidewalls of the aperture and the bottom of the aperture; and

a lens structure located over the aperture and also registered with the photosensitive element.

8. The image sensor pixel of claim 7 wherein the photosensitive element comprises a photodiode.

9. The image sensor pixel of claim 7 wherein the patterned dielectric layer comprises a patterned dielectric and metallization stack layer.

10. The image sensor pixel of claim 9 wherein the liner layer passivates a terminal metallization layer within the patterned dielectric and metallization stack layer.

11. The image sensor pixel of claim 7 further comprising a filler material layer located upon the liner layer within the aperture.

12. The image sensor pixel of claim 11 wherein the filler material layer comprises a planarizing material.

13. The image sensor pixel of claim 11 wherein the filler material layer comprises a color filter material.

14. The image sensor pixel of claim 7 wherein the liner layer comprises silicon nitride.

15. An image sensor pixel comprising:

a photosensitive element located within a substrate;

a patterned dielectric and metallization layer located over the substrate, the patterned dielectric and metallization layer having an aperture therein registered with the photosensitive element, where a metallization layer within the patterned dielectric and metallization layer protrudes into the aperture;

a liner layer located conformally and contiguously upon the top surface of the patterned dielectric layer, the sidewalls of the aperture including the metallization layer that protrudes into the aperture, and the bottom of the aperture; and

a lens structure located over the aperture and also registered with the photosensitive element.

16. The image sensor pixel of claim 15 wherein the metallization layer that protrudes into the aperture includes a capping layer.

17. The image sensor pixel of claim 15 wherein the metallization layer that protrudes into the aperture is chamfered.

18. The image sensor pixel of claim 15 wherein the photosensitive element comprises a photodiode.

19. The image sensor pixel of claim 15 wherein the liner layer passivates a terminal metal layer within the dielectric and metallization stack layer.

20. The image sensor pixel of claim 15 further comprising a filler material layer located upon the liner layer within the aperture.

21. A method for fabricating an image sensor pixel comprising:

forming a photosensitive element within a substrate;

forming a patterned dielectric layer over the substrate, the patterned dielectric layer having an aperture therein registered with the photosensitive element;

forming a liner layer conformally and contiguously upon the top surface of the patterned dielectric layer, the sidewalls of the aperture and the bottom of the aperture; and

forming a lens structure over the aperture and also registered with the photosensitive element.

22. The method of claim 21 wherein the forming the photosensitive element comprises forming a photodiode.

23. The method of claim 21 wherein the forming the patterned dielectric layer comprises forming a patterned dielectric and metallization layer.

24. The method of claim 23 wherein the forming the liner layer comprises forming the liner layer to passivate a terminal metal layer within the patterned dielectric and metallization layer.

25. The method of claim 21 further comprising forming a filler material layer upon the liner layer within the aperture.

26. The method of claim 25 wherein the liner layer has a higher index of refraction than the filler material layer or the patterned dielectric layer.

27. A method for fabricating an image sensor pixel comprising:

forming a photosensitive element within a substrate;

forming a patterned dielectric and metallization layer over the substrate, the patterned dielectric and metallization layer having an aperture therein registered with the photosensitive element, where a metallization layer within the patterned dielectric and metallization layer protrudes into the aperture;

forming a liner layer conformally and contiguously upon the top surface of the patterned dielectric layer, the sidewalls of the aperture including the metallization layer that protrudes into the aperture, and the bottom of the aperture; and

forming a lens structure over the aperture and also registered with the photosensitive element.

28. The method of claim 27 further comprising chamfering the metallization layer that protrudes into the aperture prior to forming the liner layer thereupon.

29. The method of claim 27 wherein the forming the photosensitive element comprises forming a photodiode.

30. The method of claim 27 wherein the forming the liner layer comprises forming the liner layer to passivate a terminal metal layer within the patterned dielectric and metallization layer.

31. The method of claim 27 further comprising forming a filler material layer upon the liner layer within the aperture.

32. The method of claim 31 wherein the liner layer has a higher index of refraction than the filler material layer or the patterned dielectric and metallization layer.