Semiconductor device

• US 20070188214A1
• Filed: 03/29/2007
• Published: 08/16/2007
• Est. Priority Date: 09/02/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Osada, Takeshi, Matsuzaki, Takanori
• Granted Patent: US 8,416,220 B2
• Time in Patent Office: Days
• US Class Current: 327/330
• CPC Class Codes: H02M 7/217 using semiconductor devices only

Abstract

A rectifier circuit configured with a conventional configuration using an operational amplifier and a diode by a thin film transistor over an insulating substrate cannot exhibit the performance of a rectifier circuit due to the low stability of operational amplifier and the low high-frequency characteristic. Therefore, the rectifier circuit requires to be configured by using an IC outside of the insulating substrate in order to rectify a high-frequency signal. According to the invention, an amplifier circuit and a waveform shaping circuit are configured with a thin film transistor and a non-rectified signal is switched by a signal thereof, so that a rectifier circuit with the excellent high-frequency characteristic can be realized.

Claims

1. A semiconductor device comprising:

a first substrate;

a pixel portion formed over the first substrate; and

a sound signal circuit comprising a rectifier circuit formed over the first substrate.

4. The semiconductor device according to claim 1 further comprising:

a source signal line driver circuit formed over the first substrate; and

a gate signal line driver circuit formed over the first substrate.

7. The semiconductor device according to claim 1 further comprising a second substrate over the pixel portion.

10. The semiconductor device according to claim 1, wherein the rectifier circuit is a half-wave rectifier circuit comprising a thin film transistor.

13. The semiconductor device according to claim 1, wherein the rectifier circuit comprises a comparison circuit comprising a thin film transistor.

16. The semiconductor device according to claim 1, wherein the pixel portion comprises a thin film transistor.

2. A semiconductor device comprising:

a first substrate;

a pixel portion formed over the first substrate; and

a sound signal circuit comprising;

a rectifier circuit formed over the first substrate; and

an amplifier circuit formed over the first substrate.

5. The semiconductor device according to claim 2 further comprising:

a source signal line driver circuit formed over the first substrate; and

a gate signal line driver circuit formed over the first substrate.

8. The semiconductor device according to claim 2 further comprising a second substrate over the pixel portion.

11. The semiconductor device according to claim 2, wherein the rectifier circuit is a half-wave rectifier circuit comprising a thin film transistor.

14. The semiconductor device according to claim 2, wherein the rectifier circuit comprises a comparison circuit comprising a thin film transistor.

17. The semiconductor device according to claim 2, wherein the pixel portion comprises a thin film transistor.

19. The semiconductor device according to claim 2, wherein the amplifier circuit comprises a thin film transistor.

20. The semiconductor device according to claim 2, wherein each of the main amplifier circuit and preamplifier circuit comprises a thin film transistor.

3. A semiconductor device comprising:

a first substrate; and

a pixel portion formed over the first substrate;

a sound signal circuit comprising;

a rectifier circuit formed over the first substrate;

a main amplifier circuit formed over the first substrate; and

a preamplifier circuit formed over the first substrate.

6. The semiconductor device according to claim 3 further comprising:

a source signal line driver circuit formed over the first substrate; and

a gate signal line driver circuit formed over the first substrate.

9. The semiconductor device according to claim 3 further comprising a second substrate over the pixel portion.

12. The semiconductor device according to claim 3, wherein the rectifier circuit is a half-wave rectifier circuit comprising a thin film transistor.

15. The semiconductor device according to claim 3, wherein the rectifier circuit comprises a comparison circuit comprising a thin film transistor.

18. The semiconductor device according to claim 3, wherein the pixel portion comprises a thin film transistor.