Sputtering targets and methods for fabricating sputtering targets having multiple materials

• US 20070189916A1
• Filed: 01/08/2007
• Published: 08/16/2007
• Est. Priority Date: 07/23/2002
• Status: Abandoned Application

• Current Assignee: Heraeus Incorporated (Heraeus Holding GMBH)
• Original Assignee: Heraeus Incorporated (Heraeus Holding GMBH)
• Inventors: Zhang, Wenjun
• Application Number:
  US11/650,515
• Publication Number:
  US 20070189916A1
• Time in Patent Office: Days
• US Class Current: 419/66
• CPC Class Codes: B22F 1/12 Metallic powder containing non-metallic particles containing lubricating or binding agents or organic material B22F1/10
• CPC Class Codes: B22F 2998/10 Processes characterised by the sequence of their steps
• CPC Class Codes: B22F 3/15 Hot isostatic pressing
• CPC Class Codes: B22F 9/04 starting from solid material, e.g. by crushing, grinding or milling C22C1/1084 takes precedence; crushing, grinding or milling, in general, see the relevant subclasses, e.g. B02C
• CPC Class Codes: C22C 19/007 with a light metal (alkali metal Li, Na, K, Rb, Cs; earth alkali metal Be, Mg, Ca, Sr, Ba, Al Ga, Ge, Ti) or B, Si, Zr, Hf, Sc, Y, lanthanides, actinides, as the next major constituent
• CPC Class Codes: C22C 19/03 based on nickel
• CPC Class Codes: C22C 19/07 based on cobalt
• CPC Class Codes: C22C 27/06 Alloys based on chromium
• CPC Class Codes: C22C 32/0026 Matrix based on Ni, Co, Cr or alloys thereof
• CPC Class Codes: C22C 38/002 containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
• CPC Class Codes: C22C 38/02 containing silicon
• CPC Class Codes: C22C 38/06 containing aluminium
• CPC Class Codes: C22C 38/10 containing cobalt
• CPC Class Codes: C22C 38/12 containing tungsten, tantalum, molybdenum, vanadium, or niobium
• CPC Class Codes: C22C 5/04 Alloys based on a platinum group metal
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

A sputter target comprises a plurality of materials. The plurality of materials includes at least a first material and a second material. The first material is comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe). The second material is comprised of carbon (C), a carbon (C)-containing material, a carbide, a nitrogen (N)-containing material, a nitride, a silicon (Si)-containing material, a silicide, an oxygen (O)-containing material, an oxide, boron (B), a boron (B)-containing material or a boride. The second material constitutes a phase where the phase of the second material has an average size between greater than 0 micron and 50 microns. According to one aspect, the first material comprises at least 15 atomic percent or greater. Methods of fabricating sputter targets by blending a plurality of materials are also disclosed.

Claims

1. A sputter target comprising a plurality of materials, the plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of carbon (C), a carbon (C)-containing material, a carbide, a nitrogen (N)-containing material, a nitride, a silicon (Si)-containing material, or a silicide, the second material constituting a phase, the phase of the second material having an average size between greater than 0 micron and 50 microns, the first material comprising at least 15 atomic percent or greater.

2. The sputter target of claim 1, wherein the carbide is a carbide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the nitride is a nitride of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

3. The sputter target of claim 1, wherein the nitrogen (N)-containing material is a nitrogen (N)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB,

wherein the carbon (C)-containing material is a carbon (C)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB,

wherein the silicon (Si)-containing material is a silicon (Si)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the silicide is a silicide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

4. The sputter target of claim 1, wherein the second material is comprised of the carbide or the nitride,

wherein the carbide is a carbide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the nitride is a nitride of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

5. The sputter target of claim 1, wherein the second material is comprised of the silicide,

wherein the silicide is a silicide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

6. The sputter target of claim 1, wherein the second material is comprised of the nitride, wherein the nitride is a nitride of aluminum (Al).

7. The sputter target of claim 1, wherein the phase of the second material has an average size between 0.1 microns and 10 microns.

8. The sputter target of claim 1, wherein the phase of the second material has an average size between 1 micron and 5 microns.

9. The sputter target of claim 1, wherein the phase of the second material has an average size less than 2 microns.

10. The sputter target of claim 1, wherein the first material is comprised of a cobalt (Co) element, a chromium (Cr) element, a ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based master alloy, a chromium (Cr) based master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni) based master alloy, an iron (Fe) based master alloy, a cobalt (Co) based compound, a chromium (Cr) based compound, a ruthenium (Ru) based compound, a nickel (Ni) based compound, or an iron (Fe) based compound.

11. The sputter target of claim 1, wherein the first material constitutes a first phase, and the first phase of the first material has an average size between greater than 0 micron and 50 microns.

12. The sputter target of claim 1, wherein the plurality of materials includes a third material, the third material comprised of platinum (Pt) or tantalum (Ta).

13. The sputter target of claim 1, wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element based master alloy, a cobalt-refractory element based master alloy, a transition element based compound, or a refractory element based compound.

14. The sputter target of claim 13, wherein the third material constitutes a phase, and the phase of the third material has an average size between greater than 0 micron and 50 microns.

15. The sputter target of claim 1, wherein the sputter target comprises an alloy, the alloy including a plurality of phases, the plurality of phases including at least a first phase and a second phase, the first material constituting the first phase, the second phase being the phase of the second material, the first material comprised of a cobalt (Co) element, a chromium (Cr) element, a ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based master alloy, a chromium (Cr) based master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni) based master alloy, an iron (Fe) based master alloy, a cobalt (Co) based compound, a chromium (Cr) based compound, a ruthenium (Ru) based compound, a nickel (Ni) based compound, or an iron (Fe) based compound.

16. A sputter target comprising a plurality of materials, the plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of an oxygen (O)-containing material or an oxide, the second material constituting a phase, the phase of the second material having an average size between greater than 0 micron and 50 microns.

17. The sputter target of claim 16, wherein the oxide is an oxide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

18. The sputter target of claim 16, wherein the oxygen (O)-containing material is an oxygen (O)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

19. The sputter target of claim 16, wherein the oxide is an oxide of one or more of transition or refractory elements.

20. The sputter target of claim 16, wherein the oxygen (O)-containing material is an oxygen (O)-containing material including one or more of transition or refractory elements.

21. The sputter target of claim 16, wherein the second material is comprised of the oxide, wherein the oxide is an oxide of silicon (Si), aluminum (Al) or titanium (Ti).

22. The sputter target of claim 16, wherein the second material is comprised of the oxide, wherein the oxide is silicon dioxide (SiO₂).

23. The sputter target of claim 16, wherein the second material is comprised of the oxide, wherein the oxide is titanium oxide (TiO₂).

24. The sputter target of claim 16, wherein the phase of the second material has an average size between 0.1 microns and 10 microns.

25. The sputter target of claim 16, wherein the phase of the second material has an average size between 1 micron and 5 microns.

26. The sputter target of claim 16, wherein the phase of the second material has an average size less than 2 microns.

27. The sputter target of claim 16, wherein the first material is comprised of a cobalt (Co) element, a ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni) based master alloy, an iron (Fe) based master alloy, a cobalt (Co) based compound, a ruthenium (Ru) based compound, a nickel (Ni) based compound, or an iron (Fe) based compound.

28. The sputter target of claim 16, wherein the first material constitutes a first phase, and the first phase of the first material has an average size between greater than 0 micron and 50 microns.

29. The sputter target of claim 16, wherein the plurality of materials includes a third material, the third material comprised of platinum (Pt) or tantalum (Ta).

30. The sputter target of claim 16, wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element based master alloy, a cobalt-refractory element based master alloy, a transition element based compound, or a refractory element based compound.

31. The sputter target of claim 30, wherein the third material constitutes a phase, and the phase of the third material has an average size between greater than 0 micron and 50 microns.

32. The sputter target of claim 16, wherein the sputter target comprises an alloy, the alloy including a plurality of phases, the plurality of phases including at least a first phase and a second phase, the first material constituting the first phase, the second phase being the phase of the second material, the first material comprised of a cobalt (Co) element, a ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni) based master alloy, an iron (Fe) based master alloy, a cobalt (Co) based compound, a ruthenium (Ru) based compound, a nickel (Ni) based compound, or an iron (Fe) based compound.

33. The sputter target of claim 16, wherein the sputter target is comprised of Co, Cr, Pt and SiO₂.

34. The sputter target of claim 16, wherein the first material comprises at least 15 atomic percent or greater.

35. A sputter target comprising a plurality of materials, the plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of an oxygen (O)-containing material or an oxide, the second material constituting a phase, the phase of the second material having an average size between greater than 0 micron and 50 microns,

wherein if the sputter target consists of chromium (Cr) and the oxygen (O)-containing material only, the oxygen (O)-containing material is an oxygen (O)-containing material other than simply chromium oxide, and

wherein if the sputter target consists of chromium (Cr) and the oxide only, the oxide is an oxide other than simply chromium oxide.

36. The sputter target of claim 35, wherein the oxygen (O)-containing material is an oxygen (O)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the oxide is an oxide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

37. The sputter target of claim 35, wherein the oxide is an oxide of one or more of transition or refractory elements, and wherein the oxygen (O)-containing material is an oxygen (O)-containing material including one or more of transition or refractory elements.

38. The sputter target of claim 35, wherein the second material is comprised of the oxide, wherein the oxide is an oxide of silicon (Si), aluminum (Al) or titanium (Ti).

39. The sputter target of claim 35, wherein the second material is comprised of the oxide, wherein the oxide is silicon dioxide (SiO₂).

40. The sputter target of claim 35, wherein the second material is comprised of the oxide, wherein the oxide is titanium oxide (TiO₂).

41. The sputter target of claim 35, wherein the phase of the second material has an average size between 0.1 microns and 10 microns.

42. The sputter target of claim 35, wherein the phase of the second material has an average size between 1 micron and 5 microns.

43. The sputter target of claim 35, wherein the phase of the second material has an average size less than 2 microns.

44. The sputter target of claim 35, wherein the first material is comprised of a cobalt (Co) element, a chromium (Cr) element, a ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based master alloy, a chromium (Cr) based master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni) based master alloy, an iron (Fe) based master alloy, a cobalt (Co) based compound, a chromium (Cr) based compound, a ruthenium (Ru) based compound, a nickel (Ni) based compound, or an iron (Fe) based compound,

wherein the first material constitutes a first phase, and the first phase of the first material has an average size between greater than 0 micron and 50 microns.

45. The sputter target of claim 35, wherein the plurality of materials includes a third material, the third material comprised of platinum (Pt) or tantalum (Ta).

46. The sputter target of claim 35, wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element based master alloy, a cobalt-refractory element based master alloy, a transition element based compound, or a refractory element based compound.

47. The sputter target of claim 46, wherein the third material constitutes a phase, and the phase of the third material has an average size between greater than 0 micron and 50 microns.

48. The sputter target of claim 35, wherein the sputter target comprises an alloy, the alloy including a plurality of phases, the plurality of phases including at least a first phase and a second phase, the first material constituting the first phase, the second phase being the phase of the second material, the first material comprised of a cobalt (Co) element, a ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni) based master alloy, an iron (Fe) based master alloy, a cobalt (Co) based compound, a ruthenium (Ru) based compound, a nickel (Ni) based compound, or an iron (Fe) based compound.

49. The sputter target of claim 35, wherein the sputter target is comprised of Co, Cr, Pt and SiO₂.

50. The sputter target of claim 35, wherein the first material comprises at least 15 atomic percent or greater.

51. The sputter target of claim 35, wherein if the sputter target consists of chromium (Cr) and the oxygen (O)-containing material only, the oxygen (O)-containing material is an oxygen (O)-containing material other than simply chromium oxide or simply silicon dioxide (SiO₂), and

wherein if the sputter target consists of chromium (Cr) and the oxide only, the oxide is an oxide other than simply chromium oxide or simply silicon dioxide (SiO₂).

52. A sputter target comprising a plurality of materials, the plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of boron (B), a boron (B)-containing material or a boride, the second material constituting a phase, the phase of the second material having an average size between greater than 0 micron and less than 10 microns.

53. The sputter target of claim 52, wherein the boron (B)-containing material is a boron (B)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the boride is a boride of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

54. The sputter target of claim 52, wherein the second material is comprised of boron (B).

55. The sputter target of claim 52, wherein the phase of the second material has an average size less than 2 microns.

56. The sputter target of claim 52, wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element based master alloy, a cobalt-refractory element based master alloy, a transition element based compound, or a refractory element based compound.

57. A sputter target comprising a plurality of materials, the plurality of materials including at least a first material and a second material, the first material comprised of ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of boron (B), a boron (B)-containing material or a boride, the second material constituting a phase, the phase of the second material having an average size between greater than 0 micron and 50 microns.

58. The sputter target of claim 57, wherein the boron (B)-containing material is a boron (B)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the boride is a boride of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

59. The sputter target of claim 57, wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element based master alloy, a cobalt-refractory element based master alloy, a transition element based compound, or a refractory element based compound.

60. A method of fabricating a sputter target, the method comprising the steps of:

blending a plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of carbon (C), a carbon (C)-containing material, a carbide, a nitrogen (N)-containing material, a nitride, a silicon (Si)-containing material, or a silicide, the second material having an average particle size between greater than 0 micron and 50 microns, the first material comprising at least 15 atomic percent or greater, the plurality of materials comprised of multiple powders, one or more master alloy or compound powders, or a mixture of one or more powders with one or more master alloy or compound powders;

canning; and

pressing.

61. The method of claim 60, wherein the carbon (C)-containing material is a carbon (C)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB,

wherein the carbide is a carbide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB,

wherein the nitrogen (N)-containing material is a nitrogen (N)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB,

wherein the nitride is a nitride of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB,

wherein the silicon (Si)-containing material is a silicon (Si)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the silicide is a silicide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

62. The method of claim 60, wherein the second material is comprised of the carbide, the nitride, or the silicide,

wherein the carbide is a carbide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB,

wherein the nitride is a nitride of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the silicide is a silicide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

63. The method of claim 60, wherein the second material has an average particle size between 1 micron and 5 microns.

64. The method of claim 60, wherein the plurality of materials includes a third material, the third material comprised of platinum (Pt) or tantalum (Ta).

65. The method of claim 60, wherein the plurality of materials further includes a third material comprised of a transition element powder, a refractory element powder, a cobalt-transition element based master alloy powder, a cobalt-refractory element based master alloy powder, a transition element based compound powder, or a refractory element based compound powder.

66. A method of fabricating a sputter target, the method comprising the steps of:

blending a plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of an oxygen (O)-containing material or an oxide, the second material having an average particle size between greater than 0 micron and 50 microns, the plurality of materials comprised of multiple powders, one or more master alloy or compound powders, or a mixture of one or more powders with one or more master alloy or compound powders;

canning; and

pressing.

67. The method of claim 66, wherein the oxygen (O)-containing material is an oxygen (O)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the oxide is an oxide of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

68. The method of claim 66, wherein the second material has an average particle size between 1 micron and 5 microns.

69. The method of claim 66, wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element based master alloy, a cobalt-refractory element based master alloy, a transition element based compound, or a refractory element based compound.

70. The method of claim 66, wherein the second material is comprised of the oxide, wherein the oxide is silicon dioxide (SiO₂).

71. The method of claim 66, wherein the second material is comprised of the oxide, wherein the oxide is titanium oxide (TiO₂).

72. A method of fabricating a sputter target, the method comprising the steps of:

blending a plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of an oxygen (O)-containing material or an oxide, the second material having an average particle size between greater than 0 micron and 50 microns, the plurality of materials comprised of multiple powders, one or more master alloy or compound powders, or a mixture of one or more powders with one or more master alloy or compound powders,

wherein if the plurality of materials consists of chromium (Cr) and the oxygen (O)-containing material only, the oxygen (O)-containing material is an oxygen (O)-containing material other than simply chromium oxide, and

wherein if the plurality of materials consists of chromium (Cr) and the oxide only, the oxide is an oxide other than simply chromium oxide;

canning; and

pressing.

73. The method of claim 72, wherein the second material is comprised of the oxide, wherein the oxide is an oxide of silicon (Si), aluminum (Al) or titanium (Ti).

74. The method of claim 72, wherein the second material has an average particle size less than 2 microns.

75. The method of claim 72, wherein the first material is comprised of a cobalt (Co) element, a chromium (Cr) element, a ruthenium (Ru) element, a nickel (Ni) element, an iron (Fe) element, a cobalt (Co) based master alloy, a chromium (Cr) based master alloy, a ruthenium (Ru) based master alloy, a nickel (Ni) based master alloy, an iron (Fe) based master alloy, a cobalt (Co) based compound, a chromium (Cr) based compound, a ruthenium (Ru) based compound, a nickel (Ni) based compound, or an iron (Fe) based compound.

76. The method of claim 72, wherein the plurality of materials includes a third material, the third material comprised of platinum (Pt) or tantalum (Ta).

77. The method of claim 72, wherein the sputter target is comprised of Co, Cr, Pt and SiO₂.

78. The method of claim 72, wherein the second material is comprised of the oxide, wherein the oxide is silicon dioxide (SiO₂).

79. The method of claim 72, wherein the second material is comprised of the oxide, wherein the oxide is titanium oxide (TiO₂).

80. A method of fabricating a sputter target, the method comprising the steps of:

blending a plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of boron (B), a boron (B)-containing material or a boride, the second material having an average particle size between greater than 0 micron and less than 10 microns, the plurality of materials comprised of multiple powders, one or more master alloy or compound powders, or a mixture of one or more powders with one or more master alloy or compound powders;

canning; and

pressing.

81. The method of claim 80, the boron (B)-containing material is a boron (B)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the boride is a boride of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

82. The method of claim 80, wherein the second material is comprised of boron (B).

83. A method of fabricating a sputter target, the method comprising the steps of:

blending a plurality of materials including at least a first material and a second material, the first material comprised of ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of boron (B), a boron (B)-containing material or a boride, the second material having an average particle size between greater than 0 micron and less than 50 microns, the plurality of materials comprised of multiple powders, one or more master alloy or compound powders, or a mixture of one or more powders with one or more master alloy or compound powders;

canning; and

pressing.

84. The method of claim 83, wherein the boron (B)-containing material is a boron (B)-containing material including one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB, and

wherein the boride is a boride of one or more elements from the Periodic Table of elements shown in Roman numeral column number IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB or IVB.

85. The method of claim 83, wherein the plurality of materials further includes a third material comprised of a transition element powder, a refractory element powder, a cobalt-transition element based master alloy powder, a cobalt-refractory element based master alloy powder, a transition element based compound powder, or a refractory element based compound powder.