Ruthenium alloy magnetic media and sputter targets
First Claim
1. A magnetic recording medium, comprising:
- a first layer comprised of ruthenium (Ru) and an alloying element, the alloying element selected from the group consisting of boron (B), aluminum (Al), silicon (Si), manganese (Mn), germanium (Ge), selenium (Se), zirconium (Zr), silver (Ag), tin (Sn), ytterbium (Yb), lutetium (Lu), hafnium (Hf), osmium (Os), gold (Au), bismuth (Bi) and thallium (Th), the alloying element present in the first layer in an amount exceeding a solid solubility limit of the alloying element in hexagonal close-packed (HCP) phase ruthenium (Ru) at or above room temperature.
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Accused Products
Abstract
A magnetic recording medium having an underlayer comprised of ruthenium (Ru) and an alloying element is provided. The alloying element may be for refining grain size, when it has little or no solid solubility in HCP phase Ru and is present in an amount in excess of that solubility. The alloying element may be for reducing lattice misfit, where it has some solid solubility in HCP phase Ru and is present in an amount not exceeding that solubility. The alloying element may be for both refining grain size and reducing lattice misfit, where it has some solid solubility in HCP phase Ru and is present in an amount in excess of that solubility. The underlayer may alternately include ruthenium and two alloying elements, one for refining grain size, the other for reducing lattice misfit. A sputter target comprising ruthenium and an alloying element is also provided.
56 Citations
30 Claims
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1. A magnetic recording medium, comprising:
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a first layer comprised of ruthenium (Ru) and an alloying element, the alloying element selected from the group consisting of boron (B), aluminum (Al), silicon (Si), manganese (Mn), germanium (Ge), selenium (Se), zirconium (Zr), silver (Ag), tin (Sn), ytterbium (Yb), lutetium (Lu), hafnium (Hf), osmium (Os), gold (Au), bismuth (Bi) and thallium (Th), the alloying element present in the first layer in an amount exceeding a solid solubility limit of the alloying element in hexagonal close-packed (HCP) phase ruthenium (Ru) at or above room temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 12, 13)
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11. A magnetic recording medium, comprising:
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a first layer comprised of ruthenium (Ru) and an alloying element, the alloying element selected from the group consisting of boron (B), aluminum (Al), scandium (Sc), titanium (Ti), zirconium (Zr), niobium (Nb), palladium (Pd), lanthanum (La), cerium (Ce), lutetium (Lu), and hafnium (Hf), the alloying element present in the first layer in an amount not exceeding a solid solubility limit of the alloying element in hexagonal close-packed (HCP) phase ruthenium (Ru) at or above room temperature.
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14. A magnetic recording medium, comprising:
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a first layer comprised of ruthenium (Ru) and an alloying element, the alloying element selected from the group consisting of boron (B), aluminum (Al), scandium (Sc), titanium (Ti), zirconium (Zr), niobium (Nb), palladium (Pd), lanthanum (La), cerium (Ce), lutetium (Lu), and hafnium (Hf), the alloying element present in the first layer in an amount exceeding a solid solubility limit of the alloying element in hexagonal close-packed (HCP) phase ruthenium (Ru) at or above room temperature. - View Dependent Claims (15, 16, 17)
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18. A sputter target comprising:
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ruthenium (Ru); and
an alloying element selected from the group consisting of boron (B), aluminum (Al), silicon (Si), manganese (Mn), germanium (Ge), selenium (Se), zirconium (Zr), silver (Ag), tin (Sn), ytterbium (Yb), lutetium (Lu), hafnium (Hf), osmium (Os), gold (Au), bismuth (Bi) and thallium (Th), the alloying element present in the sputter target in an amount exceeding a solid solubility limit of the alloying element in hexagonal close-packed (HCP) phase ruthenium (Ru) at or above room temperature. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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26. A sputter target comprising:
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ruthenium (Ru); and
an alloying element selected from the group consisting of boron (B), aluminum (Al), scandium (Sc), titanium (Ti), zirconium (Zr), niobium (Nb), palladium (Pd), lanthanum (La), cerium (Ce), lutetium (Lu), and hafnium (Hf), the alloying element present in the sputter target in an amount not exceeding a solid solubility limit of the alloying element in hexagonal close-packed (HCP) phase ruthenium (Ru) at or above room temperature. - View Dependent Claims (27)
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28. A sputter target comprising:
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ruthenium (Ru); and
an alloying element selected from the group consisting of boron (B), aluminum (Al), scandium (Sc), titanium (Ti), zirconium (Zr), niobium (Nb), palladium (Pd), lanthanum (La), cerium (Ce), lutetium (Lu), and hafnium (Hf), the alloying element present in the sputter target in an amount exceeding a solid solubility limit of the alloying element in hexagonal close-packed (HCP) phase ruthenium (Ru) at or above room temperature. - View Dependent Claims (29, 30)
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Specification