LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING
First Claim
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1. A method comprising:
- providing a light-emitting diode (LED) wafer assembly having a plurality of LED stacks disposed above a conductive substrate, each of the LED stacks comprising;
a p-doped layer disposed above the conductive substrate;
an active layer for emitting light disposed above the p-doped layer; and
an n-doped layer disposed above the active layer;
applying a protective layer covering a selected portion of a surface of the n-doped layer for each of the plurality of LED stacks;
altering the surface of the n-doped layer by at least one of roughening and texturing, wherein the protective layer shields the selected portion of each of the plurality of LED stacks during the altering; and
removing the protective layer.
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Abstract
Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
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Citations
20 Claims
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1. A method comprising:
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providing a light-emitting diode (LED) wafer assembly having a plurality of LED stacks disposed above a conductive substrate, each of the LED stacks comprising;
a p-doped layer disposed above the conductive substrate;
an active layer for emitting light disposed above the p-doped layer; and
an n-doped layer disposed above the active layer;
applying a protective layer covering a selected portion of a surface of the n-doped layer for each of the plurality of LED stacks;
altering the surface of the n-doped layer by at least one of roughening and texturing, wherein the protective layer shields the selected portion of each of the plurality of LED stacks during the altering; and
removing the protective layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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providing a light-emitting diode (LED) wafer assembly having a plurality of LED stacks disposed above a conductive substrate, each of the LED stacks comprising;
a p-doped layer disposed above the conductive substrate;
an active layer for emitting light disposed above the p-doped layer; and
an n-doped layer disposed above the active layer;
applying a protective layer covering a selected portion of a surface of the n-doped layer for each of the plurality of LED stacks;
immersing the surface of the n-doped layer having the protective layer applied in an electrolytic solution;
applying an electrical bias to the conductive substrate; and
illuminating the surface of the n-doped layer such that photoelectrochemical (PEC) oxidation and etching occurs to roughen the surface of the n-doped layer, wherein the protective layer shields the selected portion of each of the plurality of LED stacks during the illuminating. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method comprising:
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providing a light-emitting diode (LED) wafer assembly comprising a plurality of LED dies; and
selectively altering a desired portion of a light-emitting surface of each of the plurality of LED dies by at least one of roughening and texturing, wherein each of the plurality of LED dies has a remaining portion of the light-emitting surface that is excluded from the altering. - View Dependent Claims (17, 18, 19, 20)
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Specification