LIGHT EMITTING DEVICE
First Claim
Patent Images
1. A light emitting device comprising:
- a first electrode;
a first insulating film formed over the first electrode;
a light emitting layer formed over the first insulating film;
a second insulating film formed over the light emitting layer;
a second electrode formed over the second insulating film; and
a carrier supply layer interposed between the first and second insulating films,wherein the light emitting layer includes a base material and an additive material, andwherein the carrier supply layer comprises a semiconductor material including at least one of an n-type impurity element and a p-type impurity element.
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Abstract
An object is to provide a light emitting element using an inorganic compound as a light emitting material, which has ever-higher luminous efficiency and can be driven with low voltage. The chance of excitation of light emitting centers (atoms) in a light emitting layer is increased to enhance luminous efficiency by providing a carrier supply layer in order to increase the number of carries in the light emitting layer of a light emitting element using an inorganic compound, and drive voltage of the light emitting element or a light emitting device is reduced.
31 Citations
28 Claims
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1. A light emitting device comprising:
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a first electrode; a first insulating film formed over the first electrode; a light emitting layer formed over the first insulating film; a second insulating film formed over the light emitting layer; a second electrode formed over the second insulating film; and a carrier supply layer interposed between the first and second insulating films, wherein the light emitting layer includes a base material and an additive material, and wherein the carrier supply layer comprises a semiconductor material including at least one of an n-type impurity element and a p-type impurity element. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A light emitting device comprising:
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a first electrode; a first insulating film formed over the first electrode; a light emitting layer formed over the first insulating film; a second insulating film formed over the light emitting layer; a second electrode formed over the second insulating film; and a plurality of carrier supply layers interposed between the first and second insulating films, wherein the light emitting layer includes a base material and an additive material, and wherein the plurality of carrier supply layers comprise a semiconductor material including at least one of an n-type impurity element and a p-type impurity element. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A light emitting device comprising:
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a first electrode; a first insulating film formed over the first electrode; a light emitting layer formed over the first insulating film; a second insulating film formed over the light emitting layer; a second electrode formed over the second insulating film; and a carrier supply layer interposed between the first and second insulating films, wherein the light emitting layer is at least partly in contact with the carrier supply layer, wherein the light emitting layer includes a base material and an additive material, and wherein the carrier supply layer comprises a semiconductor material including at least one of an n-type impurity element and a p-type impurity element. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A light emitting device comprising:
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a first electrode; a first insulating film formed over the first electrode; a light emitting layer formed over the first insulating film; a second insulating film formed over the light emitting layer; a second electrode formed over the second insulating film; and a plurality of carrier supply layers interposed between the first and second insulating films, wherein the light emitting layer is at least partly in contact with the plurality of carrier supply layers, wherein the light emitting layer includes a base material and an additive material, and wherein the plurality of carrier supply layers comprise a semiconductor material including at least one of an n-type impurity element and a p-type impurity element. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification