GATE STACKS
First Claim
1. A semiconductor structure, comprising:
- (a) a semiconductor region;
(b) a gate stack on top of the semiconductor region, the gate stack including(i) a gate dielectric region on top of the semiconductor region,(ii) a first gate polysilicon region on top of the gate dielectric region, and(iii) a second gate polysilicon region on top of the first gate polysilicon region, the second gate polysilicon region being doped with a type of dopants; and
(c) a diffusion barrier region and a spacer oxide region on a side wall of the gate stack,wherein the diffusion barrier region is sandwiched between the gate stack and the spacer oxide region,wherein the diffusion barrier region is in direct physical contact with both the first and second gate polysilicon regions, andwherein the diffusion barrier region comprises a material having a property of preventing a diffusion of oxygen-containing materials through the diffusion barrier region.
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Accused Products
Abstract
A gate stack structure. The structure includes (a) a semiconductor region and (b) a gate stack on top of the semiconductor region. The gate stack includes (i) a gate dielectric region on top of the semiconductor region, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region and doped with a type of dopants. The structure further includes (c) a diffusion barrier region and a spacer oxide region on a side wall of the gate stack. The diffusion barrier region (i) is sandwiched between the gate stack and the spacer oxide region and (ii) is in direct physical contact with both the first and second gate polysilicon regions, and (iii) comprises a material having a property of preventing a diffusion of oxygen-containing materials through the diffusion barrier region.
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Citations
7 Claims
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1. A semiconductor structure, comprising:
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(a) a semiconductor region; (b) a gate stack on top of the semiconductor region, the gate stack including (i) a gate dielectric region on top of the semiconductor region, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region, the second gate polysilicon region being doped with a type of dopants; and (c) a diffusion barrier region and a spacer oxide region on a side wall of the gate stack, wherein the diffusion barrier region is sandwiched between the gate stack and the spacer oxide region, wherein the diffusion barrier region is in direct physical contact with both the first and second gate polysilicon regions, and wherein the diffusion barrier region comprises a material having a property of preventing a diffusion of oxygen-containing materials through the diffusion barrier region. - View Dependent Claims (2, 3, 4)
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5. A semiconductor structure, comprising:
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(a) a semiconductor substrate; (b) a gate stack on top of the semiconductor substrate, the gate stack including (i) a gate dielectric region on top of the semiconductor substrate, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region, the second gate polysilicon region being heavily doped with a type of dopants; and (c) a first diffusion barrier region and a first spacer oxide region on a first side wall of the gate stack, wherein the first diffusion barrier region is sandwiched between the gate stack and the first spacer oxide region, and wherein the first diffusion barrier region is in direct physical contact with both the first and second gate polysilicon regions; and (d) a second diffusion barrier region and a second spacer oxide region on a second side wall of the gate stack, wherein the second diffusion barrier region is sandwiched between the gate stack and the second spacer oxide region, wherein the second diffusion barrier region is in direct physical contact with both the first and second gate polysilicon regions, and wherein the first and second diffusion barrier regions comprise a material having a property of preventing a diffusion of oxygen-containing materials through the first and second diffusion barrier regions. - View Dependent Claims (6, 7)
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Specification