×

GATE STACKS

  • US 20070194385A1
  • Filed: 08/08/2006
  • Published: 08/23/2007
  • Est. Priority Date: 10/01/2004
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor structure, comprising:

  • (a) a semiconductor region;

    (b) a gate stack on top of the semiconductor region, the gate stack including(i) a gate dielectric region on top of the semiconductor region,(ii) a first gate polysilicon region on top of the gate dielectric region, and(iii) a second gate polysilicon region on top of the first gate polysilicon region, the second gate polysilicon region being doped with a type of dopants; and

    (c) a diffusion barrier region and a spacer oxide region on a side wall of the gate stack,wherein the diffusion barrier region is sandwiched between the gate stack and the spacer oxide region,wherein the diffusion barrier region is in direct physical contact with both the first and second gate polysilicon regions, andwherein the diffusion barrier region comprises a material having a property of preventing a diffusion of oxygen-containing materials through the diffusion barrier region.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×