POLY FILLED SUBSTRATE CONTACT ON SOI STRUCTURE

• US 20070196963A1
• Filed: 02/21/2006
• Published: 08/23/2007
• Est. Priority Date: 02/21/2006
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Leobandung, Effendi, Naeem, Munir, Dobuzinsky, David, Tessier, Brian, Kim, Byeong
• Granted Patent: US 7,358,172 B2
• Time in Patent Office: Days
• US Class Current: 438/149
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body

Abstract

Embodiments herein present a method for forming a poly filled substrate contact on a SOI structure. The method forms an insulator on a substrate and forms a substrate contact hole within the insulator. The insulator surface level is higher than final structure. Next, a poly overfill is performed, comprising filling the substrate contact hole with polysilicon and covering the insulator with the polysilicon. Specifically, the thickness of the polysilicon is greater than the size of the substrate contact hole. Following this, the polysilicon is etched, wherein a portion of the polysilicon is removed, and wherein the substrate contact hole is left partially filled with the polysilicon. Further, the etching of the polysilicon forms a concave recess within a top portion of the polysilicon. The etching of said polysilicon does not contact the substrate. The excess of insulator is polished off to the desired level.

Claims

1. A method for forming a silicon on insulator structure, comprising:

forming an insulator on a substrate;

forming a substrate contact hole within said insulator;

performing a poly overfill, comprising filling said substrate contact hole with polysilicon and covering said insulator with said polysilicon; and

etching said polysilicon, comprising removing a portion of said polysilicon and leaving said substrate contact hole partially filled with said polysilicon.

2. The method according to claim 1, wherein said forming said substrate contact hole comprises forming said substrate contact hole to have a size that is less than a thickness of said polysilicon.

3. The method according to claim 1, further comprising implanting ions into said substrate contact hole partially filled with said polysilicon.

4. The method according to claim 1, further comprising polishing said insulator to remove a portion of said insulator, wherein said polishing of said insulator is conducted subsequent to said performing of said poly overfill and subsequent to said etching of said polysilicon.

5. The method according to claim 1, wherein said etching of said polysilicon further comprises forming a concave recess within a top portion of said polysilicon.

6. The method according to claim 1, wherein said forming of said insulator comprises forming oxide on said substrate.

7. A method for forming a silicon on insulator structure, comprising:

forming an insulator on a substrate;

forming a substrate contact hole within said insulator;

performing a poly overfill, comprising filling said substrate contact hole with polysilicon and covering said insulator with said polysilicon; and

etching said polysilicon, comprising removing a portion of said polysilicon and leaving said substrate contact hole partially filled with said polysilicon,

wherein said etching of said polysilicon does not contact said substrate.

8. The method according to claim 7, wherein said forming said substrate contact hole comprises forming said substrate contact hole to have a size that is less than a thickness of said polysilicon.

9. The method according to claim 7, further comprising implanting ions into said substrate contact hole partially filled with said polysilicon.

10. The method according to claim 7, further comprising polishing said insulator to remove a portion of said insulator, wherein said polishing of said insulator is conducted subsequent to said performing of said poly overfill and subsequent to said etching of said polysilicon.

11. The method according to claim 7, wherein said etching of said polysilicon further comprises forming a concave recess within a top portion of said polysilicon.

12. The method according to claim 7, wherein said forming of said insulator comprises forming oxide on said substrate.

13. A method for forming a silicon on insulator structure, comprising:

forming an insulator on a substrate;

forming a substrate contact hole within said insulator;

performing a poly overfill, comprising filling said substrate contact hole with polysilicon and covering said insulator with said polysilicon;

etching said polysilicon, comprising removing a portion of said polysilicon and leaving said substrate contact hole partially filled with said polysilicon,

implanting ions into said substrate contact hole partially filled with said polysilicon; and

after implanting said ions, polishing said insulator to remove a portion of said insulator.

14. The method according to claim 13, wherein said forming said substrate contact hole comprises forming said substrate contact hole to have a size that is less than a thickness of said polysilicon.

15. The method according to claim 13, wherein said polishing of said insulator is conducted subsequent to said performing of said poly overfill and subsequent to said etching of said polysilicon.

16. The method according to claim 13, wherein said etching of said polysilicon further comprises forming a concave recess within a top portion of said polysilicon.

17. A method for forming a silicon on insulator structure, comprising:

forming an insulator on a substrate;

forming a substrate contact hole within said insulator;

performing a poly overfill, comprising filling said substrate contact hole with polysilicon and covering said insulator with said polysilicon;

etching said polysilicon, comprising removing a portion of said polysilicon and leaving said substrate contact hole partially filled with said polysilicon,

wherein said etching of said polysilicon does not contact said substrate;

implanting ions into said substrate contact hole partially filled with said polysilicon; and

after implanting said ions, polishing said insulator to remove a portion of said insulator.

18. The method according to claim 17, wherein said forming said substrate contact hole comprises forming said substrate contact hole to have a size that is less than a thickness of said polysilicon.

19. The method according to claim 17, wherein said polishing of said insulator is conducted subsequent to said performing of said poly overfill and subsequent to said etching of said polysilicon.

20. The method according to claim 17, wherein said etching of said polysilicon further comprises forming a concave recess within a top portion of said polysilicon.