Capacitance dielectric layer, capacitor and forming method thereof
First Claim
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1. A capacitance dielectric layer, comprising:
- a first dielectric layer;
a second dielectric layer; and
a silicon nitride stacked layer disposed between the first dielectric layer and the second dielectric layer.
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Abstract
A capacitance dielectric layer is provided. The capacitance dielectric layer includes a first dielectric layer, a second dielectric layer and a silicon nitride stacked layer. The silicon nitride stacked layer is disposed between the first dielectric layer and the second dielectric layer. The structure of the capacitance dielectric layer permits an increase in the capacitance per unit area by decreasing the thickness of the capacitance dielectric layer and eliminates the problems of having a raised leakage current and a diminished breakdown voltage.
31 Citations
35 Claims
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1. A capacitance dielectric layer, comprising:
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a first dielectric layer;
a second dielectric layer; and
a silicon nitride stacked layer disposed between the first dielectric layer and the second dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a capacitance dielectric layer, comprising:
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forming a silicon nitride stacked layer over a first dielectric layer; and
forming a second dielectric layer over the silicon nitride stacked layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A capacitor, comprising:
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a first electrode plate;
a first dielectric layer disposed over the first electrode plate;
a second dielectric layer disposed over the first dielectric layer;
a second electrode plate disposed over the second dielectric layer; and
a silicon nitride stacked layer disposed between the first dielectric layer and the second dielectric layer. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification