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Nitride semiconductor component and process for its production

  • US 20070197004A1
  • Filed: 12/20/2006
  • Published: 08/23/2007
  • Est. Priority Date: 02/23/2006
  • Status: Active Grant
First Claim
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1. Process for the production of a layer structure of a nitride semiconductor component on a silicon surface, including the steps:

  • provision of a substrate that has a silicon surface;

    deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate;

    optional;

    deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer;

    deposition of a masking layer on the nitride nucleation layer or, where present, on the first nitride buffer layer;

    deposition of a gallium-containing first nitride semiconductor layer on the masking layer,wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 μ

    m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.

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