Power Semiconductor Device And Method For Producing It

• US 20070200219A1
• Filed: 02/21/2007
• Published: 08/30/2007
• Est. Priority Date: 02/21/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Otremba, Ralf
• Granted Patent: US 7,679,197 B2
• Time in Patent Office: Days
• US Class Current: 257/692
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8381 involving forming an intermetallic compound at the bonding interface
• CPC Class Codes: H01L 2224/83825 Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49513 having bonding material between chip and die pad
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49568 specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 25/074 : Stacked arrangements of non-apertured devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor

Abstract

A power semiconductor device (1; 37) has a leadframe (4), at least one vertical power semiconductor component (2) and at least one further electronic device (3) which is arranged on the power semiconductor component (2). The chip carrier (5) of the leadframe (4) has at least two separate parts (7, 8) on which the power semiconductor component (2) is arranged. The power semiconductor component (2) is embodied such that the lower surface (28) of the first part (7) of the chip carrier (5) provides a ground contact area (36) of the power semiconductor component (2).

Claims

1. A power semiconductor device, comprising the following features:

a leadframe comprising a chip carrier and a plurality of leads, the chip carrier comprising at least two separate parts,

a vertical power semiconductor component having a first side and a second side, at least one first contact area and at least one control contact area being arranged on the first side, and a second contact area being arranged on the second side,

the first contact area being arranged on a first part of the chip carrier and being electrically connected to the first part of the chip carrier, and the control contact area being arranged on a second part of the chip carrier and being electrically connected to the second part of the chip carrier,

a plastic housing composition, which embeds at least the power semiconductor component and the upper surface of the chip carrier and leaves free at least a lower surface of the first part of the chip carrier, the plastic housing composition comprising a lower outer surface which together with the lower surface of the first part of the chip carrier forms a common outer surface of the power device,

wherein

at least one further electronic device is arranged on the second contact area of the vertical power semiconductor component, and the power semiconductor component is embodied such that the lower surface of the first part of the chip carrier provides a ground contact area of the power semiconductor device.

2. The power semiconductor device as claimed in claim 1,

wherein

the electronic device is a control semiconductor chip or a capacitor or a resistor or an inductor.

3. The power semiconductor device as claimed in claim 1,

wherein

the electronic device is a vertical diode having a first side and a second side, the first side comprising a cathode and the second side having an anode.

4. The power semiconductor device as claimed in claim 3,

wherein

the diode is electrically connected to the second contact area of the vertical power semiconductor component via an electrically conductive layer.

5. The power semiconductor device as claimed in claim 3,

wherein

the cathode of the diode is arranged on the second contact area of the second side of the vertical power semiconductor component and is electrically connected to the second contact area via the electrically conductive layer.

6. The power semiconductor device as claimed in claim 3,

wherein

the diode is connected in parallel with the power semiconductor component.

7. The power semiconductor device as claimed in claim 6,

wherein

the diode is connected as a freewheeling diode.

8. The power semiconductor device as claimed in claim 4,

wherein

the electrically conductive layer comprises a diffusion solder connection.

9. The power semiconductor device as claimed in claim 1,

wherein

the first contact area comprises a plurality of contact bumps arranged on the first contact area.

10. The power semiconductor device as claimed in claim 1,

wherein

the first contact area of the power semiconductor component is electrically connected to the first part of the chip carrier and the control contact area of the power semiconductor component is electrically connected to the second part of the chip carrier, in each case via a diffusion solder connection.

11. The power semiconductor device as claimed in claim 10,

wherein

the diffusion solder connection comprises at least one contact layer and a diffusion solder layer, the contact layer being arranged on the first side of the power semiconductor component.

12. The power semiconductor device as claimed in claim 1,

wherein

the power semiconductor component is a MOSFET or an IGBT.

13. The power semiconductor device as claimed in claim 1,

wherein

the first part of the chip carrier is thicker than the second part of the chip carrier, the lower surface of the second part of the chip carrier being embedded in the plastic housing composition.

14. The power semiconductor device as claimed in claim 1,

wherein

the lower surface of the second part of the chip carrier is free of the plastic composition and together with the lower surface of the first part of the chip carrier and the lower outer surface of the plastic housing composition forms a common outer surface of the power semiconductor device.

15. The power semiconductor device as claimed in claim 1,

wherein

the leads are arranged at a side of the chip carrier.

16. The power semiconductor device as claimed in claim 1,

wherein

a lead extends from the second part of the chip carrier and projects from the plastic housing composition.

17. The power semiconductor device as claimed in claim 1,

wherein

the leads in each case comprise an external contact area which is essentially coplanar with the lower surface of the first part of the chip carrier.

18. The power semiconductor device as claimed in claim 1,

wherein

the power semiconductor device has a TO252 or a TO220 housing.

19. A method for producing a power semiconductor device, comprising the following method steps:

providing a leadframe comprising a chip carrier and a plurality of leads, the chip carrier comprising at least two separate parts,

providing a vertical power semiconductor component having a first side and a second side, at least one first contact area and at least one control contact area being arranged on the first side, and a second contact area being arranged on the second side,

mounting of a first contact area of the power semiconductor component on the first part of the chip carrier with formation of an electrical connection and mounting of the control contact area on the second part of the chip carrier with formation of an electrical connection,

mounting of at least one further electronic device on the second contact area of the vertical power semiconductor component,

Embedding of at least the power semiconductor component and the upper surface of the chip carrier in a plastic housing composition, at least a lower surface of the first part of the chip carrier remaining free of the plastic housing composition, and the plastic composition comprising a lower outer surface which together with the lower surface of the first part of the chip carrier forms a common outer surface of the power device,

the power semiconductor component being embodied such that the lower surface of the first part of the chip carrier provides a ground contact area of the power semiconductor device.

20. The method as claimed in claim 19,

wherein

a vertical diode having a first side and a second side is provided as the electronic device, the first side comprising a cathode and the second side having an anode.

21. The method as claimed in claim 20,

wherein

the diode is electrically connected to the second contact area of the vertical power semiconductor component via an electrically conductive layer.

22. The method as claimed in claim 21,

wherein

the cathode of the diode is arranged on the second contact area of the second side of the vertical power semiconductor component and is electrically connected to the second contact area via the electrically conductive layer.

23. The method as claimed in claim 20,

wherein

a MOSFET or an IGBT is provided as the power semiconductor component and the diode is connected in parallel with the power semiconductor component.

24. The method as claimed in claim 20,

wherein

a MOSFET or an IGBT is provided as the power semiconductor component and the diode is connected as a freewheeling diode.

25. The method as claimed in claim 20,

wherein

the diode is mounted on the second contact area by means of a diffusion solder.

26. The method as claimed in claim 19,

wherein

a plurality of contact bumps are applied on the first contact area by means of electrodeposition or sputtering or vapor deposition.

27. The method as claimed in claim 19,

wherein

the first contact area of the power semiconductor component is electrically connected to the first part of the chip carrier and the control contact area of the power semiconductor component is electrically connected to the second part of the chip carrier, in each case by means of a diffusion solder.

28. The method as claimed in claim 19,

wherein

the first part of the chip carrier is thicker than the second part of the chip carrier, the lower surface of the second part of the chip carrier being embedded in the plastic housing composition.

29. The method as claimed in claim 19,

wherein

the lower surface of the second part of the chip carrier remains free of the plastic composition and together with the lower surface of the first part of the chip carrier and the lower outer surface of the plastic housing composition forms a common outer surface of the power semiconductor device.