Method for manufacturing magnetoresistance effect element

• US 20070202249A1
• Filed: 02/08/2007
• Published: 08/30/2007
• Est. Priority Date: 02/09/2006
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuzawa, Hideaki, Yuasa, Hiromi, Fuji, Yoshihiko, Iwasaki, Hitoshi
• Granted Patent: US 7,897,201 B2
• Time in Patent Office: Days
• US Class Current: 427/131
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3163 Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: G11B 5/3929 Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
• CPC Class Codes: H01F 10/3259 Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 10/3281 only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
• CPC Class Codes: H01F 41/303 with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
• CPC Class Codes: H01F 41/325 applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition

Abstract

A method is for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer being sequentially stacked. The method includes: forming at least a part of a magnetic layer that is to become either one of the magnetization fixed layer and the magnetization free layer; forming a function layer including at least one of an oxide, a nitride, and a fluoride on the part of the magnetic layer; and removing a part of the function layer by exposing the function layer to either one of an ion beam and plasma irradiation.

Claims

1. A method for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer being sequentially stacked, the method comprising:

forming at least a part of a magnetic layer that is to become either one of the magnetization fixed layer and the magnetization free layer;

forming a function layer including at least one of an oxide, a nitride, and a fluoride on the part of the magnetic layer; and

removing a part of the function layer by exposing the function layer to either one of an ion beam and plasma irradiation.

2. The method according to claim 1, wherein the ion beam is irradiated at a voltage of 110V or less.

3. The method according to claim 1, wherein the plasma irradiation is performed at a plasma power in a range from 15 W to 30 W.

4. The method according to claim 1, further comprising forming the non-magnetic intermediate layer by a conductive material.

5. The method according to claim 1, further comprising forming the non-magnetic intermediate layer to include an insulator and a conductor, the conductor penetrating through the non-magnetic intermediate layer.

6. The method according to claim 1, further comprising forming the non-magnetic intermediate layer by a non-conductive material.

7. A method for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic insulating intermediate layer, and a magnetization free layer being sequentially stacked, the method comprising:

forming the non-magnetic insulating intermediate layer by one of an oxide, a nitride, and a fluoride; and

removing a part of the non-magnetic insulating intermediate layer by exposing the non-magnetic insulating intermediate layer to either one of an ion beam and plasma irradiation.