Nitride-based semiconductor light-emitting device and method of manufacturing the same

• US 20070202624A1
• Filed: 01/04/2007
• Published: 08/30/2007
• Est. Priority Date: 02/24/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Lee, Jeong-wook, Yoon, Suk-ho, Kim, Joo-sung, Sone, Cheol-soo
• Granted Patent: US 7,541,206 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

Claims

1. A method of manufacturing a nitride-based semiconductor light-emitting device, comprising:

sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate;

forming a plurality of masking dots on an upper surface of the p-clad layer;

forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots;

forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer;

forming an n-electrode on the rough n-contact surface; and

forming a p-electrode on the p-contact layer.

2. The method of claim 1, wherein the masking dots are formed of Si_xN_y.

3. The method of claim 2, wherein the masking dots are formed using organic metal chemical vapor deposition process or a molecular beam epitaxy process.

4. The method of claim 3, wherein the masking dots may be formed by supplying a Si vapor source and an N vapor source and chemically reacting the Si vapor source and the N vapor source.

5. The method of claim 4, wherein the Si vapor source comprises at least one material out of SiH₄, Si₂H₆, ditertiarybutyl silane(DTBSi), and tetraethyl silane(TESi).

6. The method of claim 4, wherein the N vapor source comprises NH₃.

7. The method of claim 1, wherein the p-contact layer is formed of substantially the same material as a material used to form the p-clad layer.

8. The method of claim 1, wherein the depth of the rough surface of the p-contact layer is equal to or greater than approximately 10 nm.

9. The method of claim 1, wherein the p-electrode comprises at least one of a transparent electrode and a reflective electrode.

10. A nitride-based semiconductor light-emitting device manufactured using the method of claim 1.

11. A nitride-based semiconductor light-emitting device comprising a n-clad layer having a stepped portion formed by etching a predetermined portion of the upper surface of the n-clad layer, wherein the stepped portion has a rough n-contact upper surface;

an active layer formed on the upper surface of the n-clad layer;

a p-clad layer formed on the active layer;

a plurality of masking dots formed on the upper surface of the p-clad layer;

a p-contact layer formed on portions of the p-clad layer between the masking dots to have a rough structure;

a n-electrode formed on the rough n-contact surface; and

a p-electrode formed on the p-contact layer.

12. The nitride-based semiconductor light-emitting device of claim 11, wherein the masking dots are formed of SiN.

13. The nitride-based semiconductor light-emitting device of claim 11, wherein the p-contact layer is formed of substantially the same material as a material used to form the p-clad layer.

14. The nitride-based semiconductor light-emitting device of claim 11, wherein the depth of the rough surface of the p-contact layer is equal to or greater than approximately 10 nm.

15. The nitride-based semiconductor light-emitting device of claim 11, wherein the p-electrode comprises at least one of a transparent electrode and a reflective electrode.