Manufacturing process for integrated piezo elements
First Claim
1. A method for producing integrated microelectromechanical elements, the method comprising:
- forming a silicon layer on an insulation layer;
forming a piezoresistive layer on or in the silicon layer; and
forming at least one etch opening for etching at least one cavity substantially within the silicon layer.
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Accused Products
Abstract
A method is provided for the production of integrated microelectromechanical elements, in which first a silicon layer is formed on an insulation layer, then a piezoresistive layer on or in the silicon layer, and then at least one etch opening for etching at least one cavity substantially within the silicon layer. The shape of the cavity in the silicon layer is predefined by arrangement of additional vertical and horizontal etch stop layers, and the etching process is readily reproducible. The method is suitable for being integrated into standard fabrication processes particularly with circuit components needed for signal conditioning and signal processing.
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Citations
18 Claims
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1. A method for producing integrated microelectromechanical elements, the method comprising:
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forming a silicon layer on an insulation layer; forming a piezoresistive layer on or in the silicon layer; and forming at least one etch opening for etching at least one cavity substantially within the silicon layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 18)
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2. A method for producing integrated microelectromechanical elements, the method comprising:
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first, forming a silicon layer on an insulation layer; second, forming at least one etch opening for etching at least one cavity substantially within the silicon layer; and third, forming a piezoresistive layer on or in the silicon layer, wherein the first, second and third steps are performed sequentially.
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17. A Microelectromechanical element comprising:
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an insulation layer; a silicon layer; and a patterned piezoresistive layer, wherein, within the silicon layer, a cavity and above the cavity a self-supporting membrane are provided, on which are disposed at least parts of the piezoresistive, patterned layer.
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Specification