Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
First Claim
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1. A method of manufacturing a capacitor, the method comprising:
- depositing high dielectric material on a first low dielectric material;
etching a trough region in said high dielectric material;
filling said trough region with metal; and
depositing second low dielectric material on said trough region filled with said metal and said high dielectric material.
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Abstract
A decoupling capacitor is provided for a semiconductor device and may include a first low dielectric insulator layer and a low resistance conductor formed into at least two interdigitized patterns on the surface of the first low dielectric insulator in a single interconnect plane. A high dielectric constant material may be provided between the two patterns. A circuit for testing a plurality of these capacitors is also provided which includes a charge monitoring circuit, a coupling circuit and a control circuit.
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Citations
14 Claims
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1. A method of manufacturing a capacitor, the method comprising:
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depositing high dielectric material on a first low dielectric material;
etching a trough region in said high dielectric material;
filling said trough region with metal; and
depositing second low dielectric material on said trough region filled with said metal and said high dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification