Plasma processing apparatus

• US 20070204958A1
• Filed: 02/28/2007
• Published: 09/06/2007
• Est. Priority Date: 03/03/2006
• Status: Active Grant

• Current Assignee: Advanced Display Process Engineering Co., Ltd.
• Original Assignee: Advanced Display Process Engineering Co., Ltd.
• Inventors: Hwang, Young-Joo, Lee, Seoung-Wook
• Granted Patent: US 7,699,957 B2
• Time in Patent Office: Days
• US Class Current: 156/345.310
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01J 2237/0206 Extinguishing, preventing or controlling unwanted discharges
• CPC Class Codes: Y10S 156/914 Differential etching apparatus including particular materials of construction
• CPC Class Codes: Y10S 414/135 Associated with semiconductor wafer handling

Abstract

Disclosed is a plasma processing apparatus, in which parasitic plasma is not generated in a transfer chamber. The plasma processing apparatus has a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers. Each of the gate valves includes a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein; a valve including a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber; a valve driving unit connected to the valve for moving the valve in the vertical direction; and a ground member formed on the surface of the valve for electrically connecting the valve and the valve housing when the valve contacts the inner surface of the valve housing.

Claims

1. A plasma processing apparatus having a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers, each of the gate valves comprising:

a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein;

a valve including a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber;

a valve driving unit connected to the valve for moving the valve in the vertical direction; and

a ground member having the shape of a closed curve and disposed at the edge of the sealing plate or the back plate for grounding the gate valve.

2. The plasma processing apparatus according to claim 1, wherein the ground member is an O-ring made of a conductive material.

3. The plasma processing apparatus according to claim 1, wherein the ground member is a spiral ring made of a metal.

4. The plasma processing apparatus according to claim 1, wherein the ground member has a structure in which a spiral ring made of a metal is wound on the outer surface of an O-ring made of a conductive material.

5. The plasma processing apparatus according to claim 1, wherein a contact surface obtained by removing an anodizing film is formed on the inner surface of the valve housing contacting the ground member.

6. The plasma processing apparatus according to claim 1, wherein a groove having a shape corresponding to the ground member is formed in the inner surface of the valve housing contacting the ground member.

7. The plasma processing apparatus according to claim 6, wherein a bracket made of a metal having higher strength than that of aluminum is provided on the contact surface.

8. The plasma processing apparatus according to claim 7, wherein the bracket is made of one selected from the group consisting of stainless steel, Ti, and W.

9. The plasma processing apparatus according to claim 1, wherein an electrical connecting member for electrically connecting the valve housing and the chamber is provided between the valve housing and the chamber.

10. The plasma processing apparatus according to claim 9, wherein the electrical connecting member is a spiral ring made of a metal.

11. The plasma processing apparatus according to claim 9, wherein a contact surface obtained by removing an anodizing film is formed on the surface of the chamber or the valve housing contacting the electrical connecting member.

12. The plasma processing apparatus according to claim 1, wherein a ground reinforcing member for electrically connecting the lower surface of the valve and the lower surface of the valve housing is provided on the valve.

13. The plasma processing apparatus according to claim 12, wherein the ground reinforcing member is an aluminum strap having elasticity.

14. A plasma processing apparatus having a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers, each of the gate valves comprising:

a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein;

a valve disposed in the valve housing and opening and closing the opening of the processing chamber and an opening of the valve housing on the side of the processing chamber;

a valve driving unit connected to the valve for moving the valve in the vertical direction; and

a ground member formed on the surface of the valve for electrically connecting the valve and the valve housing when the valve contacts the inner surface of the valve housing,

wherein the ground member is formed at a portion of the edge of the valve so as to prevent particles from dropping on a substrate passing through the opening of the valve housing.

15. The plasma processing apparatus according to claim 14, wherein:

the valve includes a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber; and

the ground member is disposed at the edge of the back plate.

16. The plasma processing apparatus according to claim 14, wherein:

the valve includes a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber; and

the ground member is disposed at the edge of the sealing plate.

17. The plasma processing apparatus according to claim 15, wherein the ground member is disposed at side and lower portions of the sealing plate or the back plate.

18. The plasma processing apparatus according to claim 14, wherein the ground member is disposed at a portion of the edge of the valve corresponding to 10˜

99% of the whole area of the edge of the valve.

19. The plasma processing apparatus according to 14, wherein the ground member is an O-ring made of a conductive material.

20. The plasma processing apparatus according to claim 14, wherein the ground member is a spiral ring made of a metal.

21. The plasma processing apparatus according to claim 14, wherein the ground member has a structure in which a spiral ring made of a metal is wound on the outer surface of an O-ring.

22. The plasma processing apparatus according to claim 14, wherein a groove obtained by removing an anodizing film to improve a contacting property with the ground member is formed in a portion of the surface of the valve contacting the ground member.

23. The plasma processing apparatus according to claim 14, wherein a groove obtained by removing an anodizing film to improve a contacting property with the ground member is formed in a portion of the surface of the valve housing contacting the ground member.

24. The plasma processing apparatus according to claim 14, wherein:

the ground member has a structure in which an O-ring is disposed at the edge of the valve and a spiral ring made of a metal is wound on the outer surface of the O-ring at the side and lower portions of the valve; and

an anodizing film remains on a portion of the valve housing corresponding to the upper portion of the ground member, and is removed from portions of the valve housing corresponding to the side and lower portions of the ground member to form a groove.

25. The plasma processing apparatus according to claim 14, wherein:

the ground member has a structure in which an O-ring made of a conductive material is disposed at the edge of the valve and a spiral ring made of a metal is wound on the outer surface of the O-ring at the side and lower portions of the valve; and

an anodizing film is removed from a portion of the valve housing corresponding to the ground member to form a groove.

26. The plasma processing apparatus according to claim 22, wherein a bracket made of a metal having higher strength than that of aluminum is provided on the groove.

27. The plasma processing apparatus according to claim 26, wherein the bracket is made of one selected from the group consisting of stainless steel, Ti, and W.