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Enhancement of remote plasma source clean for dielectric films

  • US 20070207275A1
  • Filed: 08/23/2006
  • Published: 09/06/2007
  • Est. Priority Date: 02/21/2006
  • Status: Abandoned Application
First Claim
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1. A method of cleaning a processing chamber comprising chamber walls and a gas distribution assembly having a faceplate, comprising:

  • generating reactive oxygen species from an oxygen-containing gas in a remote plasma source connected to the processing chamber;

    generating reactive nitrogen species from a nitrogen-containing gas in the remote plasma source;

    introducing the reactive oxygen species and the reactive nitrogen species into the processing chamber; and

    exposing interior surfaces of the processing chamber to the reactive oxygen species and the reactive nitrogen species in the absence of RF power in the chamber while the gas distribution assembly and the chamber walls are heated, wherein the exposing the interior surfaces to the reactive oxygen species and the reactive nitrogen species removes carbon-containing deposits previously formed on the interior surfaces of the processing chamber during a deposition of an amorphous carbon film in the processing chamber.

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