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Method of forming an MOS transistor and structure therefor

  • US 20070207582A1
  • Filed: 03/06/2006
  • Published: 09/06/2007
  • Est. Priority Date: 03/06/2006
  • Status: Active Grant
First Claim
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1. An MOS transistor comprising:

  • a substrate having a first conductivity type;

    a body region of the transistor formed as a first doped region of a second conductivity type in the substrate and electrically coupled to a conductor;

    an opening extending into the substrate and into the first doped region, the opening having a sidewall; and

    a gate structure of the MOS transistor within the opening, the gate structure including a first insulator having a first thickness along a first portion of the sidewall and also including a second insulator having a second thickness along another portion of the sidewall wherein the second thickness is greater than the first thickness.

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