Sealing device and method for a processing system

• US 20070209590A1
• Filed: 03/08/2006
• Published: 09/13/2007
• Est. Priority Date: 03/08/2006
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Li, Yicheng
• Granted Patent: US 7,794,546 B2
• Time in Patent Office: Days
• US Class Current: 118/719
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/4409 characterised by sealing means

Abstract

A method, computer readable medium, and system for treating a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system is described. A sealing device is disposed between a first chamber assembly configured to define the process space and a second chamber assembly configured to define the transfer space. When the sealing device is engaged, vacuum isolation is provided between the process space and the transfer space. The sealing device comprises two or more contact ridges with one or more pockets formed therebetween. When the sealing device is engaged between the first chamber assembly and the second chamber assembly, gas is trapped in the one or more pockets. This trapped gas assists the release of the sealing device upon disengagement of the sealing device between the first chamber assembly and the second chamber assembly.

Claims

1. A vacuum processing system for treating a substrate, comprising:

a first chamber assembly comprising a first sealing surface;

a second chamber assembly comprising a second sealing surface; and

a sealing device coupled to and retained by one of said first sealing surface or said second sealing surface, said sealing device comprising two or more contact ridges and one or more pockets disposed therebetween,

wherein a seal between said first chamber assembly and said second chamber assembly is formed by coupling said first chamber assembly to said second chamber assembly in order to facilitate contact of said two or more contact ridges of said sealing device with said second sealing surface while trapping gas between said two or more contact ridges within said pocket.

2. The vacuum processing system of claim 1, wherein said first chamber assembly comprises a process space configured to facilitate material deposition, and said second chamber assembly comprises a transfer space to facilitate transfer of said substrate into and out of said vacuum processing system.

3. The vacuum processing system of claim 2, further comprising:

a substrate stage connected to said second chamber assembly and configured to support and translate said substrate between a first position in said process space to a second position in said transfer space.

4. The vacuum processing system of claim 3, wherein said sealing device comprises two contact ridges and a pocket formed therebetween.

5. The vacuum processing system of claim 3, wherein said sealing device comprises three contact ridges and two pockets formed therebetween.

6. The vacuum processing system of claim 4, wherein said sealing device is configured to disengage the seal during a translation of the substrate stage from the first position to the second position.

7. The vacuum processing system of claim 4, wherein said sealing device is configured to vacuum isolate the process space from the transfer space.

8. The vacuum processing system of claim 4, wherein said sealing device is configured to reduce gas leakage from said process space to said transfer space to less than 10⁻

3 Torr-l/s.

9. The vacuum processing system of claim 4, wherein said sealing device is configured to reduce gas leakage from said process space to said transfer space to less than 10⁻

4 Torr-l/s.

10. The vacuum processing system of claim 3, further comprising:

a first vacuum pumping system in fluid communication with said process space and configured to provide a reduced contaminant environment in said process space;

a second vacuum pumping system in fluid communication with said transfer space and configured to provide a reduced contaminant environment in said transfer space;

a gas injection system connected to said first chamber assembly, and configured to introduce a process composition to said process space during said material deposition; and

a temperature control system coupled to said substrate stage, and configured to control a temperature of said substrate.

11. The vacuum processing system of claim 2, wherein said sealing device is configured to compress trapped gas within the pocket when the first chamber assembly is coupled to the second chamber assembly.

12. The vacuum processing system of claim 11, wherein said first chamber assembly comprises an upper section of said vacuum processing system and said second chamber assembly comprises a lower section of said vacuum processing system;

and said substrate stage is configured to translate said substrate in a vertical direction.

13. The vacuum processing system of claim 11, further comprising:

a power source configured to couple power to a process gas composition in said process space to facilitate plasma formation.

14. The vacuum processing system of claim 13, wherein said power source comprises an RF power supply configured to output an RF energy at a frequency from 0.1 to 100 MHz;

and said substrate stage includes an electrode connected to said RF power supply and configured to couple said RF energy into said process space.

15. The vacuum processing system of claim 10, wherein said first chamber assembly comprises:

a pumping manifold comprising;

an extension extending from said first chamber assembly to separate the process space from the transfer space, and wherein said extension comprises an internal channel that pneumatically couples said inlet of said vacuum pumping system to one or more openings in said extension beyond a peripheral edge of said substrate and below a surface of said substrate.

16. The vacuum processing system of claim 15, wherein said extension includes an interior channel providing gas conductance from a first side of the extension near said substrate stage to a second side positioned longitudinally at an end of said extension opposite said first side.

17. The vacuum processing system of claim 16, wherein said extension comprises a seal plate having said first sealing surface proximate the first side of said extension.

18. The vacuum processing system of claim 17, wherein said substrate stage comprises:

a flange having said second sealing surface configured to seal to said first sealing surface on said seal plate of the extension through said sealing device upon a translation of said substrate stage toward said first chamber assembly.

19. The vacuum processing system of claim 18, wherein said sealing device comprises an elastomeric material.

20. The vacuum processing system of claim 11, wherein said process space is configured for at least one of atomic layer deposition (ALD) or chemical vapor deposition (CVD).

21. A method for sealing a first chamber assembly with a second chamber assembly in a vacuum processing system, comprising:

disposing a sealing device on a first sealing surface on said first chamber assembly, wherein said sealing device comprises two or more contact ridges and one or more pockets disposed therebetween; and

engaging said sealing device with a second sealing surface on said second chamber assembly by contacting said two or more contact ridges of said sealing device with said second sealing surface while trapping gas within said one or more pockets formed between said two or more contact ridges.

22. The method of claim 21, further comprising:

maintaining said first chamber assembly at a temperature greater than or equal to 100 degrees C., and maintaining said second chamber assembly at a temperature less than 100 degrees C.

23. The method of claim 21, further comprising:

maintaining said first chamber assembly at a temperature greater than or equal to 50 degrees C., and maintaining said second chamber assembly at a temperature less than 50 degrees C.

24. A vacuum processing system for treating a substrate, comprising:

a first chamber assembly comprising a first sealing surface;

a second chamber assembly comprising a second sealing surface; and

means for sealing said first chamber assembly to said second chamber assembly such that gas is trapped in said means for sealing when said second chamber assembly translates toward said first assembly and said gas trapped in said means for sealing is at a pressure higher than a pressure external to said means for sealing.