Method of fabricating light emitting device and thus-fabricated light emitting device

• US 20070210327A1
• Filed: 03/02/2007
• Published: 09/13/2007
• Est. Priority Date: 03/07/2006
• Status: Active Grant

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Ikeda, Hitoshi, Nakamura, Akio
• Granted Patent: US 7,825,008 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/02461 Phosphides
• CPC Class Codes: H01L 21/02463 Arsenides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Aiming at providing a method of fabricating a light emitting device having an AlGaInP light emitting section, less causative of crack by cleavage, on the edge portions on the back surface of the device chip in process of dicing or breaking, a light emitting device wafer is diced along a dicing line inclined at an angle of 15° to 30°, both ends inclusive, away from a dicing line angle reference direction defined as the <110> direction on the (100) main surface.

Claims

1. A method of fabricating a light emitting device obtaining light emitting device chips by dicing a light emitting device wafer,

the wafer having a light emitting layer section composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (Al_xGa_1-x)_yIn_1-yP (where, 0≦

x≦

1, 0≦

y≦

1), with the (100) surface appeared on the main surface thereof, and an device substrate portion stacked on the light emitting layer section as being agreed therewith in the crystal orientation, and composed of a III-V compound semiconductor,

along a dicing line inclined at an angle of 15°

to 30°

, both ends inclusive, away from a dicing line angle reference direction defined as the <

110>

direction on the main surface.

2. The method of fabricating a light emitting device as claimed in claim 1, wherein the dicing line is set at an angle of 20°

to 28°

, both ends inclusive, away from the dicing line angle reference direction.

3. The method of fabricating a light emitting device as claimed in claim 1, wherein the dicing line is set at an angle of 21°

to 24°

, both ends inclusive, away from the dicing line angle reference direction.

4. The method of fabricating a light emitting device as claimed in claim 1, wherein the light emitting device chips are obtained by half-dicing the light emitting device wafer halfway along the thickness-wise direction thereof, from the main surface side opposite to the side having the device substrate portion disposed thereon, and then by breaking the half-diced wafer along half-dicing grooves.

5. The method of fabricating a light emitting device as claimed in claim 1, wherein the device substrate portion is a GaAs single crystal substrate.

6. The method of fabricating a light emitting device as claimed in claim 1, wherein the device substrate portion is a GaP single crystal substrate.

7. A light emitting device having a light emitting layer section composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (Al_xGa_1-x)_yIn_1-yP (where, 0≦

x≦

1, 0≦

y≦

1), with the (100) surface appeared on the main surface thereof; and

an device substrate portion stacked on the light emitting layer section as being agreed therewith in the crystal orientation, and composed of a III-V compound semiconductor, wherein the side faces of the device are composed of dicing surfaces inclined, with respect to a reference surface defined as the {110} surface, at an angle of 15°

to 30°

, both ends inclusive, around the axial line normal to the main surface.

8. The light emitting device as claimed in claim 7, wherein the side face of the device are composed of the dicing surfaces inclined, with respect to the reference surface, at an angle of 20°

to 28°

, both ends inclusive, around the axial line normal to the main surface.

9. The light emitting device as claimed in claim 7, wherein the side face of the device are composed of the dicing surfaces inclined, with respect to the reference surface, at an angle of 21°

to 24°

, both ends inclusive, around the axial line normal to the main surface.

10. The light emitting device as claimed in claim 7, wherein the device substrate portion is a GaAs single crystal substrate.

11. The light emitting device as claimed in claim 7, wherein the device substrate portion is a GaP single crystal substrate.