Method of fabricating light emitting device and thus-fabricated light emitting device
First Claim
1. A method of fabricating a light emitting device obtaining light emitting device chips by dicing a light emitting device wafer,the wafer having a light emitting layer section composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦
- x≦
1, 0≦
y≦
1), with the (100) surface appeared on the main surface thereof, and an device substrate portion stacked on the light emitting layer section as being agreed therewith in the crystal orientation, and composed of a III-V compound semiconductor,along a dicing line inclined at an angle of 15°
to 30°
, both ends inclusive, away from a dicing line angle reference direction defined as the <
110>
direction on the main surface.
1 Assignment
0 Petitions
Accused Products
Abstract
Aiming at providing a method of fabricating a light emitting device having an AlGaInP light emitting section, less causative of crack by cleavage, on the edge portions on the back surface of the device chip in process of dicing or breaking, a light emitting device wafer is diced along a dicing line inclined at an angle of 15° to 30°, both ends inclusive, away from a dicing line angle reference direction defined as the <110> direction on the (100) main surface.
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Citations
11 Claims
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1. A method of fabricating a light emitting device obtaining light emitting device chips by dicing a light emitting device wafer,
the wafer having a light emitting layer section composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦ - x≦
1, 0≦
y≦
1), with the (100) surface appeared on the main surface thereof, and an device substrate portion stacked on the light emitting layer section as being agreed therewith in the crystal orientation, and composed of a III-V compound semiconductor,along a dicing line inclined at an angle of 15°
to 30°
, both ends inclusive, away from a dicing line angle reference direction defined as the <
110>
direction on the main surface.- View Dependent Claims (2, 3, 4, 5, 6)
- x≦
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7. A light emitting device having a light emitting layer section composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦
- x≦
1, 0≦
y≦
1), with the (100) surface appeared on the main surface thereof; and
an device substrate portion stacked on the light emitting layer section as being agreed therewith in the crystal orientation, and composed of a III-V compound semiconductor, wherein the side faces of the device are composed of dicing surfaces inclined, with respect to a reference surface defined as the {110} surface, at an angle of 15°
to 30°
, both ends inclusive, around the axial line normal to the main surface. - View Dependent Claims (8, 9, 10, 11)
- x≦
Specification