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Method of fabricating light emitting device and thus-fabricated light emitting device

  • US 20070210327A1
  • Filed: 03/02/2007
  • Published: 09/13/2007
  • Est. Priority Date: 03/07/2006
  • Status: Active Grant
First Claim
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1. A method of fabricating a light emitting device obtaining light emitting device chips by dicing a light emitting device wafer,the wafer having a light emitting layer section composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦

  • x≦

    1, 0≦

    y≦

    1), with the (100) surface appeared on the main surface thereof, and an device substrate portion stacked on the light emitting layer section as being agreed therewith in the crystal orientation, and composed of a III-V compound semiconductor,along a dicing line inclined at an angle of 15°

    to 30°

    , both ends inclusive, away from a dicing line angle reference direction defined as the <

    110>

    direction on the main surface.

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