Power semiconductor device
First Claim
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1. A power semiconductor device comprising:
- a semiconductor body having a common conduction region of one conductivity, and a base region of another conductivity, said semiconductor body including a first surface;
a trench extending from said first surface through said base region and into said common conduction region, said trench including at least two opposing sidewalls and a bottom;
a first gate insulation adjacent one of said sidewalls;
a first gate electrode adjacent said first gate insulation and spanning said base region;
a source region adjacent at last one sidewall of said trench;
a source contact electrically connected to said source regions; and
a Qgd implant region of said another conductivity in said base region to vary the resistivity of said base region, whereby the resistivity of said base region adjacent said first gate insulation is higher than the resistivity of said Qgd implant region and said Qgd implant is positioned to retard the encroachment of the depletion region into said base region without varying the threshold voltage of the device.
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Abstract
A power semiconductor device which includes an implant region in the base region thereof to reduce Qgd.
28 Citations
17 Claims
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1. A power semiconductor device comprising:
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a semiconductor body having a common conduction region of one conductivity, and a base region of another conductivity, said semiconductor body including a first surface;
a trench extending from said first surface through said base region and into said common conduction region, said trench including at least two opposing sidewalls and a bottom;
a first gate insulation adjacent one of said sidewalls;
a first gate electrode adjacent said first gate insulation and spanning said base region;
a source region adjacent at last one sidewall of said trench;
a source contact electrically connected to said source regions; and
a Qgd implant region of said another conductivity in said base region to vary the resistivity of said base region, whereby the resistivity of said base region adjacent said first gate insulation is higher than the resistivity of said Qgd implant region and said Qgd implant is positioned to retard the encroachment of the depletion region into said base region without varying the threshold voltage of the device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A MOSgated power semiconductor device comprising:
an active area including at least one active cell, said active cell including at least one source region, a source contact electrode connected to said source region, an insulated gate electrode, a base region of one conductivity formed adjacent a drift region of another conductivity, and a Qgd implant of the same conductivity as said base region formed in said base region and spaced from said insulated gate electrode, wherein the resistivity and the position of said Qgd implant region are selected to hinder the movement of a depletion region into said base region without affecting the threshold voltage of the device. - View Dependent Claims (14, 15, 16, 17)
Specification