Method and system for enhanced lithographic patterning
First Claim
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1. A method for pattern transfer, comprising:
- providing a patterned radiation beam toward a hard mask layer provided on a substrate, exposing first portions of the hard mask layer to a first dose of radiation from the patterned radiation beam, the first dose sufficient to enhance etch characteristics of the first portions;
exposing second portions different from the first portions of the hard mask layer to a second dose of radiation from the patterned radiation beam, the second dose sufficient to enhance etch characteristics of the second portions; and
subjecting the hard mask layer to an etch process, wherein the first and second portions are substantially removed, and wherein portions of the hard mask layer other than the first and second portions are substantially intact.
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Abstract
A double patterning system and process using a carbon-based hard mask. The double patterning system provides a means to form hard mask features in single hard mask etch step with a feature spacing smaller than a minimum spacing printable in the hard mask based on a single exposure.
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Citations
27 Claims
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1. A method for pattern transfer, comprising:
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providing a patterned radiation beam toward a hard mask layer provided on a substrate, exposing first portions of the hard mask layer to a first dose of radiation from the patterned radiation beam, the first dose sufficient to enhance etch characteristics of the first portions;
exposing second portions different from the first portions of the hard mask layer to a second dose of radiation from the patterned radiation beam, the second dose sufficient to enhance etch characteristics of the second portions; and
subjecting the hard mask layer to an etch process, wherein the first and second portions are substantially removed, and wherein portions of the hard mask layer other than the first and second portions are substantially intact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for pattern transfer, comprising:
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providing a radiation-sensitive hard mask layer on a substrate;
providing a patterned beam of radiation configured to produce a feature spacing on the hard mask layer at a first relative position between the substrate and the patterned beam of radiation, wherein first portions of the hard mask layer are exposed to an etch enhancing radiation dose;
providing the patterned beam of radiation at a second relative position between the substrate and the patterned beam of radiation that is displaced from the first relative position by a distance less than D, wherein second portions of the hard mask layer are exposed to an etch enhancing radiation dose; and
subjecting the hard mask layer to an etch, wherein the first and second portions are configured to etch substantially faster than unirradiated portions of the hard mask layer after receiving an etch enhancing dose. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A system for pattern transfer, comprising:
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a lithographic apparatus configured to supply a patterned beam of radiation, the patterned beam of radiation configured to produce a feature spacing in a substrate in a single exposure;
a substrate table for holding a substrate having a hard mask disposed thereon; and
a controller configured to change a relative position between the substrate and the patterned beam of radiation for exposure to a first dose of radiation at a first relative position between the substrate and the patterned beam of radiation and a second dose of radiation at a second relative position between the substrate and the patterned beam of radiation, a displacement between the first and second positions being less than the feature spacing, wherein portions of the hard mask receiving the first and second radiation doses are configured to etch in an etch process at a substantially faster rate that unirradiated portions of the hard mask. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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Specification