Method and system for enhanced lithographic patterning

• US 20070212649A1
• Filed: 03/07/2006
• Published: 09/13/2007
• Est. Priority Date: 03/07/2006
• Status: Abandoned Application

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Musa, Sami, Lalbahadoersing, Sanjaysingh
• Application Number:
  US11/369,222
• Publication Number:
  US 20070212649A1
• Time in Patent Office: Days
• US Class Current: 430/312
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475

Abstract

A double patterning system and process using a carbon-based hard mask. The double patterning system provides a means to form hard mask features in single hard mask etch step with a feature spacing smaller than a minimum spacing printable in the hard mask based on a single exposure.

Claims

1. A method for pattern transfer, comprising:

providing a patterned radiation beam toward a hard mask layer provided on a substrate,

exposing first portions of the hard mask layer to a first dose of radiation from the patterned radiation beam, the first dose sufficient to enhance etch characteristics of the first portions;

exposing second portions different from the first portions of the hard mask layer to a second dose of radiation from the patterned radiation beam, the second dose sufficient to enhance etch characteristics of the second portions; and

subjecting the hard mask layer to an etch process, wherein the first and second portions are substantially removed, and wherein portions of the hard mask layer other than the first and second portions are substantially intact.

2. The method of claim 1, wherein the hard mask layer is amorphous carbon having a substantial content of diamondlike carbon before exposure to the radiation beam.

3. The method of claim 2, wherein the patterned radiation beam comprises one of 248 nm, 193 nm, and 157 nm UV radiation generated from an excimer laser.

4. The method of claim 2, wherein the first and second doses are substantially the same.

5. The method of claim 2, wherein the first and second doses are each sufficient to substantially graphitize the respective first and second portions.

6. The method of claim 2, wherein the etch process is an O₂ reactive ion etching process, and wherein an etch rate ratio of irradiated to unirradiated portions of the hard mask layer is greater than about two.

7. The method of claim 1, further comprising relatively displacing the substrate and patterned radiation beam over a horizontal displacement after exposing the first portions and before exposing the second portions.

8. The method of claim 7, wherein the patterned radiation beam has a minimum feature pitch that is printable on the hard mask in a single exposure, and wherein the horizontal displacement is less than the minimum feature pitch.

9. The method of claim 8, wherein the horizontal displacement is about one half the minimum feature pitch.

10. The method of claim 2, further comprising relatively displacing the substrate and patterned radiation beam over a horizontal displacement after exposing the first portions and before exposing the second portions, wherein the patterned radiation beam has a minimum feature pitch that is printable on the hard mask in a single exposure, and wherein the horizontal displacement is less than the minimum feature pitch.

11. The method of claim 10, wherein the horizontal displacement is about one half the minimum feature pitch.

12. The method of claim 1, further comprising exposing third portions different from the first and second portions of the hard mask layer to a third dose of radiation from the patterned radiation beam before subjecting the hard mask layer to an etch process, the third dose sufficient to substantially change etch characteristics of the third portions, wherein the third portions are substantially removed during the etch process.

13. A method for pattern transfer, comprising:

providing a radiation-sensitive hard mask layer on a substrate;

providing a patterned beam of radiation configured to produce a feature spacing on the hard mask layer at a first relative position between the substrate and the patterned beam of radiation, wherein first portions of the hard mask layer are exposed to an etch enhancing radiation dose;

providing the patterned beam of radiation at a second relative position between the substrate and the patterned beam of radiation that is displaced from the first relative position by a distance less than D, wherein second portions of the hard mask layer are exposed to an etch enhancing radiation dose; and

subjecting the hard mask layer to an etch, wherein the first and second portions are configured to etch substantially faster than unirradiated portions of the hard mask layer after receiving an etch enhancing dose.

14. The method of claim 13, wherein the hard mask layer is amorphous carbon having a substantial portion of diamondlike carbon in unirradiated regions.

15. The method of claim 14, wherein the amorphous carbon layer comprises between about 90 and 50% carbon and between about 10 and 50% hydrogen.

16. The method of claim 14, wherein the amorphous carbon layer is formed by one of chemical vapor deposition, plasma enhanced chemical vapor deposition, and physical vapor deposition.

17. The method of claim 14, wherein the distance between the first position and second position is about one half the feature spacing.

18. The method of claim 13, wherein the feature spacing is a minimum feature spacing printable in the hard mask using the patterned beam of radiation in a single exposure.

19. The method of claim 13, wherein features of the first portions differ from features of the second portions of the hard mask layer.

20. The method of claim 13, further comprising leaving portions of the hard mask layer that cover alignment marks unexposed during exposure of the hard mask to the patterned beam of radiation at the first and second positions.

21. A system for pattern transfer, comprising:

a lithographic apparatus configured to supply a patterned beam of radiation, the patterned beam of radiation configured to produce a feature spacing in a substrate in a single exposure;

a substrate table for holding a substrate having a hard mask disposed thereon; and

a controller configured to change a relative position between the substrate and the patterned beam of radiation for exposure to a first dose of radiation at a first relative position between the substrate and the patterned beam of radiation and a second dose of radiation at a second relative position between the substrate and the patterned beam of radiation, a displacement between the first and second positions being less than the feature spacing, wherein portions of the hard mask receiving the first and second radiation doses are configured to etch in an etch process at a substantially faster rate that unirradiated portions of the hard mask.

22. The system of claim 21, wherein the hard mask layer is amorphous carbon having a substantial content of diamondlike carbon before exposure to the radiation beam.

23. The system of claim 21, wherein the patterned radiation beam comprises one of 248 nm, 193 nm, and 157 nm UV radiation generated from an excimer laser.

24. The system of claim 21, wherein the etch process is an O₂ reactive ion etching process, and wherein an etch rate ratio of irradiated to unirradiated portions of the hard mask layer is greater than about two.

25. The system of claim 21, wherein the controller is a substrate table controller configured to move the substrate between the first and second positions.

26. The system of claim 21, wherein the controller is a controller for a maskless means for generating the patterned beam of radiation, the controller configured to shift the patterned beam of radiation between the first and second positions.

27. The system of claim 21, wherein the patterned beam of radiation has a first configuration at the first relative position and a second configuration at the second relative position.