Integrated Circuit With Bulk and SOI Devices Connected with an Epitaxial Region
2 Assignments
0 Petitions
Accused Products
Abstract
An integrated circuit having devices fabricated in both SOI regions and bulk regions, wherein the regions are connected by a trench filled with epitaxially deposited material. The filled trench provides a continuous semiconductor surface joining the SOI and bulk regions. The SOI and bulk regions may have the same or different crystal orientations. The present integrated circuit is made by forming a substrate with SOI and bulk regions separated by an embedded sidewall spacer (made of dielectric). The sidewall spacer is etched, forming a trench that is subsequently filled with epitaxial material. After planarizing, the substrate has SOI and bulk regions with a continuous semiconductor surface. A butted P-N junction and silicide layer can provide electrical connection between the SOI and bulk regions.
22 Citations
18 Claims
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1-13. -13. (canceled)
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14. A method for forming a semiconductor integrated circuit with an SOI region and a bulk region, comprising the steps of:
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a) forming a substrate with and SOI region and a bulk region separated by an embedded sidewall spacer;
b) etching the sidewall spacer to form an empty trench; and
c) epitaxially depositing semiconductor material in the trench. - View Dependent Claims (15, 16, 17, 18)
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Specification