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METHOD AND APPARATUS FOR FABRICATING A HIGH DIELECTRIC CONSTANT TRANSISTOR GATE USING A LOW ENERGY PLASMA SYSTEM

  • US 20070212895A1
  • Filed: 12/20/2006
  • Published: 09/13/2007
  • Est. Priority Date: 03/09/2006
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, comprising:

  • forming a dielectric layer having a desired thickness on a surface of a substrate;

    disposing an amount of a first material within the dielectric layer to form a concentration gradient through at least a portion of the thickness of the formed dielectric layer using a low energy sputtering process, wherein the low energy sputtering process comprises providing an RF energy at a first RF frequency and a first RF power to a processing region of a low energy sputtering chamber so that a first material of a target can be disposed within the dielectric layer;

    exposing the dielectric layer and the first material to an RF plasma comprising nitrogen; and

    depositing a second material over the dielectric layer.

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