Light Emitting Device and Method of Manufacturing the Same

• US 20070215882A1
• Filed: 03/02/2007
• Published: 09/20/2007
• Est. Priority Date: 03/06/2006
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Son, Hyo Kun
• Granted Patent: US 7,612,380 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a first conductive type lower semiconductor layer, a current diffusion layer, a first conductive type upper semiconductor layer, an active layer, and a second conductive type semiconductor layer. The current diffusion layer is formed on the first conductive type lower semiconductor layer. The first conductive type upper semiconductor layer is formed on the current diffusion layer. The active layer is formed on the first conductive type upper semiconductor layer. The second conductive type semiconductor layer is formed on the active layer.

Claims

1. A light emitting device comprising:

a first conductive type lower semiconductor layer;

a current diffusion layer on the first conductive type lower semiconductor layer;

a first conductive type upper semiconductor layer on the current diffusion layer;

an active layer on the first conductive type upper semiconductor layer; and

a second conductive type semiconductor layer on the active layer.

2. The light emitting device according to claim 1, wherein the current diffusion layer comprises at least one of ITO, Co, W, or Fe.

3. The light emitting device according to claim 1, further comprising:

a first electrode on one of the first conductive type lower semiconductor layer, the current diffusion layer, or the first conductive type upper semiconductor layer; and

a second electrode on the second conductive type semiconductor layer.

4. The light emitting device according to claim 1, wherein the current diffusion layer is formed with an uneven surface.

5. The light emitting device according to claim 4, wherein the uneven surface comprises a structure of one of a right angled, a semicircular, a trapezoidal, a concave, or a convex shape.

6. The light emitting device according to claim 1, wherein the first conductive type upper semiconductor layer has indium and tin impurities.

7. The light emitting device according to claim 1, wherein the first conductive type upper semiconductor layer has a different carrier concentration than the first conductive type lower semiconductor layer.

8. The light emitting device according to claim 1, wherein the first conductive type upper semiconductor layer has different impurity doping densities by region.

9. The light emitting device according to claim 8, wherein the first conductive type upper semiconductor layer has impurity doping densities that vary in stages.

10. The light emitting device according to claim 1, further comprising:

a substrate formed under the first conductive type lower semiconductor layer, and

at least one of a buffer layer or an undoped nitride layer formed between the substrate and the first conductive type lower semiconductor layer.

11. A light emitting device comprising:

a substrate;

a first conductive type lower semiconductor layer on the substrate;

a current diffusion layer on the first conductive type lower semiconductor layer;

a first conductive type upper semiconductor layer on the current diffusion layer;

an active layer on the first conductive type upper semiconductor layer; and

a second conductive type semiconductor layer on the active layer.

12. The light emitting device according to claim 11, further comprising a first electrode on one of the first conductive type lower semiconductor layer, the current diffusion layer, or the first conductive type upper semiconductor layer.

13. The light emitting device according to claim 11, further comprising a second electrode on the second conductive type semiconductor layer.

14. The light emitting device according to claim 11, wherein the current diffusion layer comprises at least one of ITO, Co, W, or Fe.

15. The light emitting device according to claim 11, wherein the current diffusion layer is formed with an uneven surface.

16. The light emitting device according to claim 11, further comprising a buffer layer and an undoped nitride layer formed between the substrate and the first conductive type lower semiconductor layer.

17. A method of manufacturing a light emitting device, the method comprising:

forming a first conductive type lower semiconductor layer on a substrate;

forming a current diffusion layer on the first conductive type lower semiconductor layer;

forming a first conductive type upper semiconductor layer on the current diffusion layer;

forming an active layer on the first conductive type upper semiconductor layer; and

forming a second conductive type semiconductor layer on the active layer.

18. The method according to claim 17, further comprising partially removing an upper surface of the current diffusion layer to chemically produce an uneven surface.

19. The method according to claim 17, further comprising:

forming a first electrode on one of the first conductive type lower semiconductor layer, the current diffusion layer, or the first conductive type upper semiconductor layer; and

forming a second electrode on the second conductive type semiconductor layer.

20. The method according to claim 17, wherein the forming of the current diffusion layer comprises growing a current diffusion layer comprising at least one of ITO, Co, W, and Fe to a thickness of approximately 1-100,000 Å

at a temperature of approximately 1,000°

C. or higher using a metal organic chemical vapor deposition method, a molecular beam epitaxy method, a sputtering method, or an electron beam method.