POWER SEMICONDUCTOR DEVICE

• US 20070215903A1
• Filed: 03/14/2007
• Published: 09/20/2007
• Est. Priority Date: 03/15/2006
• Status: Active Grant

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Sakamoto, Kozo, Ishii, Toshiaki
• Granted Patent: US 7,514,780 B2
• Time in Patent Office: Days
• US Class Current: 257/192
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 23/49844 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/5383 Multilayer substrates H01L23/5385 takes precedence; multilayer metallisation on monolayer substrates H01L23/538
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/115 the devices being arranged next to each other
• CPC Class Codes: H01L 25/117 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10272 Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/1033 Gallium nitride [GaN]
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13062 Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15192 : Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

A power semiconductor device, having a first semiconductor region, and a second semiconductor region; mounted with a first electrode pad on a semiconductor substrate main surface at the inside surrounded by the third semiconductor region, mounted in the second semiconductor region, and a multilayer substrate having first and second wiring layers, to take out an electrode of the semiconductor chip; joining the first wiring layer part for the first electrode, mounted on the multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by the third semiconductor region, and the first electrode pad, by a conductive material; joining the first wiring layer part for the first electrode, and the second wiring layer at a conductive part; and extending the second wiring layer to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by the third semiconductor region.

Claims

1. A power semiconductor device comprising:

a first semiconductor region of a first conductive type joined with a first electrode;

a second semiconductor region of a second conductive type joined with a second electrode;

a third semiconductor region of the first conductive type mounted in said second semiconductor region;

a semiconductor chip, mounted with a first electrode pad for said first electrode on a semiconductor substrate main surface at the inside surrounded by said third semiconductor region;

a multilayer substrate having a first wiring layer, and a second wiring layer of a more inside layer than said first wiring layer from said first electrode pad, to take out an electrode of said semiconductor chip; and

a first wiring layer part for the first electrode mounted in a region opposing to the semiconductor substrate main surface at the inside surrounded by said third semiconductor region of said multilayer substrate, wherein

said first wiring layer part for the first electrode and said first electrode pad are connected with by a conductive bonding material,

said first wiring layer part for the first electrode and the second wiring layer are connected at a conductive through-hole part, and

said second wiring layer is extended to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by said third semiconductor region.

2. The power semiconductor device according to claim 1, wherein said second electrode is not directly connected with the second semiconductor region of said second conductive type, but connected via a fourth semiconductor region of the first conductive type in contact with the second semiconductor region of said second conductive type.

3. The power semiconductor device according to claim 1, wherein

said first electrode of said semiconductor chip is mounted on a main surface,

said second electrode is mounted on a second main surface, which is a rear side of said first main surface,

a first electrode terminal mounted at said first main surface side, a second electrode terminal mounted on said second main surface, said first electrode, and said first electrode terminal are connected together by a first conductive material,

said second electrode and said electrode terminal are connected by a second conductive material, and

said first electrode terminal are connected said semiconductor chip and said second electrode terminal are connected together by an insulating seal material.

4. The power semiconductor device according to claim 1, wherein

a support material different from said insulating seal material is arranged at the periphery of said semiconductor chip located between said first electrode terminal and said electrode terminal.

5. The power semiconductor device according to claim 1, wherein

a shield electrode on a surface opposing to the semiconductor chip of said multilayer substrate is mounted at the inside surrounded by said third semiconductor region.

6. The power semiconductor device according to claim 1, wherein said insulating seal material containing an epoxy resin component and an inorganic filler, and is an insulating resin material having a thermal conductivity of not less than 5 W/mK, and a volume resistivity of not less than 10¹⁶ Ω

cm.

7. The power semiconductor device according to claim 1, wherein

said semiconductor chip using a wide band-gap semiconductor substrate having a band-gap of not less than 2.0 eV.

8. A power semiconductor device comprising:

a first electrode arranged on a first main surface of a semiconductor substrate; and

a semiconductor chip arranged with a second electrode on a second main surface, which is a rear surface of said first main surface, a first electrode terminal mounted on said first main surface side, a second electrode terminal mounted on said second main surface side, said first electrode, and the first electrode terminal, by a first conductive material, wherein

said second electrode and the second electrode terminal are connected by a second conductive material,

a plurality of semiconductor element units, joined with said first electrode terminal, said semiconductor chip, and said second electrode terminal, by an insulating seal material are arranged,

the first electrode terminals of a plurality of said semiconductor element units are surface contacted with a common first electrode terminal, and

the second electrode terminals of a plurality of said semiconductor element units are connected to a common second electrode terminal.

9. The power semiconductor device according to claim 8, wherein:

said semiconductor element unit providing with a control electrode to control a main current flowing through said first electrode and said second electrode of said semiconductor chip;

extending said control electrode outside said insulating seal material and joining to a control electrode terminal; and

joining a plurality of the control electrode terminals themselves of said semiconductor element units to a common control electrode terminal.

10. The power semiconductor device according to claim 9, wherein

said control electrode terminal is took out in the different direction from said first main surface or said second main surface.

11. The power semiconductor device according to claim 8, wherein

said insulating seal material containing an epoxy resin component, and an inorganic filler, and is an insulating resin material having a thermal conductivity of not less than 5 W/mK, and a volume resistivity of not less than 10¹⁶ Ω

cm.

12. The power semiconductor device according to claim 8, wherein

said semiconductor chip using a wide band-gap semiconductor substrate having a band-gap of not less than 2.0 eV.

13. A power semiconductor device comprising:

a first electrode arranged in a first semiconductor region of a first conductive type on a first main surface of a semiconductor substrate;

a second electrode arranged in a second semiconductor region of a second conductive type on a second main surface, which is a rear surface of said first main surface;

a third semiconductor region of a second conductive type mounted in said second semiconductor region;

a semiconductor chip provided with an electrode pad joining said first electrode on a semiconductor substrate main surface at the inside surrounded by said third semiconductor region, a first electrode terminal mounted on said first main surface side, a second electrode terminal mounted on said second main surface side, said first electrode, and the first electrode terminal, by a first conductive material, wherein

said second electrode and the electrode terminal are connected by a second conductive material,

a plurality of semiconductor element units joined with said first electrode terminal, said semiconductor chip, and said second electrode terminal, by an insulating seal material are arranged,

the first electrode terminal of a plurality of said semiconductor element units being used for a common first electrode terminal; and

using the second electrode terminals of a plurality of said semiconductor element units for a common second electrode terminal.

14. A power semiconductor device comprising:

a first electrode, an auxiliary first electrode, and a control electrode which are formed on a first main surface of a semiconductor chip;

two or more semiconductor switching element chips at least having a second electrode arranged on a second main surface of the semiconductor chip;

a common first electrode terminal joined with each of said first electrode of said semiconductor chips via a conductive bonding material,

a common control electrode terminal joined with each of said control electrode of said semiconductor chips via the conductive bonding material;

a common auxiliary first electrode terminal joined with each of said auxiliary first electrode of said semiconductor chips via the conductive bonding material; and

a common second electrode terminal joined with each of said second electrode of said semiconductor chips.

15. The power semiconductor device according to claim 14, wherein

said auxiliary first electrode, an electrode wiring joining said auxiliary first electrode terminal, said control electrode, and an electrode wiring joining said control terminal are arranged in the direction of different sides of said semiconductor chip.

16. A power semiconductor device comprising:

a semiconductor chip having a first semiconductor region of a first conductive type joined with a first electrode, and a second semiconductor region of a second conductive type joined with a second electrode, and ensuring blocking voltage between the first electrode and the second electrode, by extending a depletion layer in the periphery direction of the semiconductor chip, from a semiconductor joining surface between the first semiconductor region of the first conductive type, and the second semiconductor region of said second conductive type, when voltage is applied between said first electrode and said second electrode;

a first electrode pad for said first electrode mounted on a semiconductor substrate main surface at the inside surrounded by said first semiconductor region of the first conductive type;

a multilayer substrate having a first wiring layer to take out an electrode of said semiconductor chip, and a second wiring layer at a more inside layer than said first wiring layer; and

a first wiring layer part for the first electrode mounted on said multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by said first semiconductor region;

wherein

said first wiring layer part for the first electrode, and said first electrode pad are connected by a conductive bonding material, said first wiring layer part for the first electrode and the second wiring layer are connected at a conductive through-hole part, and said second wiring layer is extended to the outside of the semiconductor chip.

17. A power semiconductor device comprising:

a semiconductor chip having a first semiconductor region of a first conductive type joined with a control electrode, and a second semiconductor region of a second conductive type joined with a second electrode, and ensuring blocking voltage between the first electrode and the control electrode, by extending a depletion layer in the periphery direction of the semiconductor chip, from a semiconductor joining surface between the first semiconductor region of the first conductive type, and the control electrode region of said second conductive type, when voltage is applied between said first electrode and said control electrode;

a control electrode pad for said control electrode mounted on a semiconductor substrate main surface at the inside surrounded by said first semiconductor region of the first conductive type;

a multilayer substrate having a first wiring layer to take out an electrode of said semiconductor chip, and a second wiring layer at a more inside layer than said first wiring layer;

a first wiring layer part for the control electrode mounted on said multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by said first semiconductor region, wherein

said first wiring layer part for the control electrode and said control electrode pad are connected by a conductive bonding material, said first wiring layer part for the control electrode and the second wiring layer are connected at a conductive through-hole part, and said second wiring layer is extended to the outside of the semiconductor chip.

18. A power semiconductor device comprising:

a semiconductor chip having a first semiconductor region of a first conductive type joined with a first electrode, and a second semiconductor region of a second conductive type joined with a second electrode, and ensuring blocking voltage between the first electrode and the second electrode, by extending a depletion layer in the periphery direction of the semiconductor chip, from a semiconductor joining surface between the first semiconductor region of the first conductive type, and the second semiconductor region of said second conductive type, when voltage is applied between said first electrode and said second electrode;

a first electrode pad for said first electrode mounted on a semiconductor substrate main surface at the inside surrounded by said first semiconductor region of the first conductive type; and

a region, wherein a wiring for the first electrode, taken out from said first electrode pad to the periphery of the semiconductor chip, formed nearly in parallel to said semiconductor chip, wherein

a dimension from the region, wherein said first electrode wiring layer is formed nearly in parallel to said semiconductor chip, to said depletion layer, is made longer than a spreading dimension of said depletion layer in the lateral direction.

19. A power semiconductor device comprising:

a semiconductor chip having a first semiconductor region of a first conductive type joined with a control electrode, and a second semiconductor region of a second conductive type joined with a second electrode, and ensuring blocking voltage between the control electrode and the second electrode, by extending a depletion layer in the periphery direction of the semiconductor chip, from a semiconductor joining surface between the first semiconductor region of the first conductive type, and the second semiconductor region of said second conductive type, when voltage is applied between said control electrode and said second electrode;

a control electrode pad for said first electrode mounted on a semiconductor substrate main surface at the inside surrounded by said first semiconductor region of the first conductive type; and

a region, wherein a wiring for the control electrode, taken out from said control electrode pad to the periphery of the semiconductor chip, formed nearly in parallel to said semiconductor chip, wherein

a dimension from the region, wherein said control electrode wiring layer is formed nearly in parallel to said semiconductor chip, to said depletion layer, is made longer than a spreading dimension of said depletion layer in the lateral direction.