Semiconductor component arrangement comprising a trench transistor

• US 20070215920A1
• Filed: 03/07/2007
• Published: 09/20/2007
• Est. Priority Date: 03/07/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Hirler, Franz, Krischke, Norbert, Zundel, Markus
• Granted Patent: US 7,868,363 B2
• Time in Patent Office: Days
• US Class Current: 257/288
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 27/0733 in combination with capacitors only
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/945 Trench capacitors

Abstract

Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least a gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises an at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.

Claims

1. A method for producing a semiconductor component arrangement, the method comprising:

producing a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench;

producing an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode;

wherein the at least one trench of the transistor structure and the at least one further trench are produced by common process steps; and

wherein the gate electrode and the at least one electrode of the electrode structure are produced by common process steps.

2. The method of claim 1, wherein the trench transistor structure further comprises at least one field electrode in the at least one trench, and wherein the electrode structure comprises at least two electrodes, wherein the at least two electrodes and the at least one gate electrode and the at least one field electrode are produced by common process steps.

3. The method of claim 1, wherein the at least one trench of the trench transistor structure and the at least one further trench are produced having different trench widths.

4. The method of claim 1, wherein prior to producing the at least one gate electrode of the trench transistor structure and prior to producing the at least one electrode of the electrode structure, dielectric layers are produced on surfaces of the at least one trench of the trench transistor structure and the at least one further trench.

5. The method of claim 1, wherein the trench transistor structure comprises a body zone and a source zone which are adjacent to the at least one trench of the trench transistor structure, wherein the body zone and the source zone are produced after producing the at least one gate electrode.

6. The method of claim 1, wherein the electrode structure is part of a trench wiring structure.

7. The method of claim 1, wherein the electrode structure is part of a capacitor structure.

8. The method of claim 1, wherein a gate dielectric is produced on surfaces of the at least one trench of the trench transistor structure, and wherein a capacitor dielectric is produced on surfaces of the at least one further trench.

9. The method of claim 8, wherein producing the capacitor dielectric comprises the steps of

thermally oxidizing surfaces of the at least one further trench, and

protecting the trench transistor structure against an oxidation by a protection layer during said thermal oxidation step.

10. The method of claim 9, wherein the gate dielectric is produced after the removal of the protection layer.

11. A semiconductor component arrangement comprising:

a semiconductor body having a first side and a second side;

a trench transistor structure integrated in the semiconductor body, the trench transistor structure comprising at least one trench and at least one gate electrode positioned in said at least one trench;

at least one electrode structure disposed in at least one further trench, the at least one electrode structure comprising at least one electrode, wherein at least one section of the at least one electrode has the same geometrical basic structure as the at least one gate electrode.

12. The semiconductor component arrangement of claim 11, further comprising at least two terminal contacts arranged in the semiconductor body or on the semiconductor body, the at least two terminal contacts electrically conductively connected to one another by at least one electrically conductive connection line, wherein the at least one electrically conductive connection line is arranged as at least one trench connection line formed by the electrode structure.

13. The semiconductor component arrangement of claim 12, further comprising an insulation layer, wherein the insulation layer comprises a layer stack having at least two layers composed of an insulation material.

14. The semiconductor component arrangement of claim 12, in wherein the at least one trench connection line comprises a doped polycrystalline semiconductor material, a semiconductor-metal compound or a metal.

15. The semiconductor component arrangement of claim 12, wherein the at least one trench connection line comprises at least two trench connection lines arranged in a trench.

16. The semiconductor component arrangement of claim 15, wherein the at least two trench connection lines are arranged in a manner spaced apart from one another in a vertical direction of the semiconductor body.

17. The semiconductor component arrangement of claim 15, wherein the at least two trench connection lines are arranged in a manner spaced apart from one another in a horizontal direction of the semiconductor body.

18. The semiconductor component arrangement of claim 15, wherein the trench comprises two mutually crossing trenches, wherein a first of the at least two trench connection lines is arranged in a first of the two mutually crossing trenches and a second of the at least two trench connection lines is arranged in a second of the two mutually crossing trenches.

19. The semiconductor component arrangement of claim 18, wherein the at least two trench connection lines are arranged in the two mutually crossing trenches at least in a crossover region of the trenches at different positions in the vertical direction of the semiconductor body.

20. The semiconductor component arrangement of claim 18, wherein the first of the at least two trench connection lines is electrically conductively connected to the second of the at least two trench connection lines in a crossover region of the two mutually crossing trenches.

21. The semiconductor component arrangement of claim 11, wherein at least one transistor structure having a source zone, a drain zone and a gate electrode is provided in the semiconductor body, and wherein at least one of the source zone, the drain zone or the gate electrode is contact-connected by at least one trench connection line.

22. The semiconductor component arrangement of claim 11, wherein a cell array of a power transistor and a temperature sensor are integrated in the semiconductor body, wherein the temperature sensor is contact-connected by at least one trench connection line.

23. The semiconductor component arrangement of claim 22, wherein the temperature sensor has a first terminal and a second terminal, the first terminal being contact-connected by a first trench connection line and the second terminal being contact-connected by a second trench connection line, the first trench connection line and the second trench connection line arranged one above another in a common trench.

24. The semiconductor component arrangement of claim 11, further comprising a wiring layer above one side of the semiconductor body, wherein at least two interconnects each having at least one terminal contact are disposed in the wiring layer, and wherein a trench connection line respectively contacts one of the terminal contacts of the interconnects.

25. The semiconductor component arrangement of claim 11, wherein a diode having an anode zone and a cathode zone is integrated in the semiconductor body, and wherein at least one of said anode zone and cathode zone is contact-connected by a trench line connection.

26. The semiconductor component arrangement of claim 11, wherein a resistance element having a first terminal and a second terminal is arranged in or on the semiconductor body, at least one of said first terminal and second terminal being contact-connected by a trench line connection.

27. The semiconductor component arrangement of claim 11, wherein a zener diode chain having at least two zener diodes and also a first terminal and a second terminal and at least one intermediate tap is arranged in or on the semiconductor body, at least one of said first terminal and second terminal being contact-connected by a trench line connection.

28. The semiconductor component arrangement of claim 11, wherein the at least one electrode structure comprises a capacitor structure having at least one capacitor electrode arranged in a trench of the semiconductor body.