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Integrated passive device substrates

  • US 20070215976A1
  • Filed: 03/17/2006
  • Published: 09/20/2007
  • Est. Priority Date: 03/17/2006
  • Status: Active Grant
First Claim
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1. A method for fabricating an integrated passive device (IPD) comprising the steps of:

  • a. providing a silicon wafer substrate, the silicon wafer substrate having intrinsic conductivity, and having a plurality of IPD sites, b. forming a polysilicon layer on the silicon wafer substrate. c. forming an insulating layer on the polysilicon layer, and b. forming at least one thin film passive device on the IPD sites.

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