Semiconductor device

• US 20070216514A1
• Filed: 03/07/2007
• Published: 09/20/2007
• Est. Priority Date: 03/10/2006
• Status: Abandoned Application

• Current Assignee: Ricoh Company Limited
• Original Assignee: Ricoh Company Limited
• Inventors: Okazaki, Takashi, Ohtsuka, Masaya, Harikai, Atsushi
• Application Number:
  US11/715,601
• Publication Number:
  US 20070216514A1
• Time in Patent Office: Days
• US Class Current: 337/404
• CPC Class Codes: G11C 17/14 in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
• CPC Class Codes: G11C 17/143 using laser-fusible links
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device includes a fuse element made of a metal wiring layer, the fuse element being fusable by laser irradiation; wherein the fuse element includes: a fusable metal part where the laser irradiation is applied so that the fusable metal part is cut; and a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.

Claims

1. A semiconductor device, comprising:

a fuse element made of a metal wiring layer, the fuse element being fusable by laser irradiation;

wherein the fuse element includes;

a fusable metal part where the laser irradiation is applied so that the fusable metal part is cut; and

a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.

2. The semiconductor device as claimed in claim 1,

wherein the fusable metal part has a Z-shaped configuration.

3. The semiconductor device as claimed in claim 1,

wherein the fusable metal part has an H-shaped configuration.

4. The semiconductor device as claimed in claim 1,

wherein the fusable metal part has a concave part in a wiring width direction.

5. The semiconductor device as claimed in claim 1,

wherein the periphery metal part is not connected to the fusable metal part.

6. The semiconductor device as claimed in claim 1,

wherein the periphery metal part is connected to the fusable metal part.

7. The semiconductor device as claimed in claim 1,

wherein a plurality of the fuse elements are arranged;

and

the fusable metal part and the periphery metal part are arranged in a zigzag manner.

8. A semiconductor device, comprising:

a splitting resistance circuit configured to obtain a voltage output by voltage splitting using two or more resistance elements and to adjust the voltage output by cutting a fuse element;

wherein the fuse element is made of a metal wiring layer and is fusable by laser irradiation; and

the fuse element includes;

a fusable metal part where laser irradiation is applied so that the fusable metal part is cut; and

a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.

9. A semiconductor device, comprising:

a splitting resistance circuit configured to split an input voltage and supply a split voltage;

a standard voltage generation circuit configured to supply a standard voltage; and

a voltage detection circuit having a comparator configured to compare the split voltage from the splitting resistance circuit and the standard voltage from the standard voltage generation circuit;

wherein the splitting resistance circuit obtains a voltage output by voltage splitting using two or more resistance element and adjusts the voltage output by cutting a fuse element;

the fuse element is made of metal wiring layer and fusable by laser irradiation; and

the fuse element includes;

a fusable metal part where laser irradiation is applied so that the fusable metal part is cut; and

a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.

10. A semiconductor device, comprising:

an output driver configured to control output of an input voltage;

a splitting resistance circuit configured to split an output voltage and supply a split voltage;

a standard voltage generation circuit configured to supply a standard voltage; and

a constant voltage generation circuit having a comparator configured to compare the split voltage from the splitting resistance circuit and the standard voltage from the standard voltage generation circuit so as to control operation of the output driver based on the result of comparison;

wherein the splitting resistance circuit obtains a voltage output by voltage splitting using two or more resistance element and adjusts the voltage output by cutting a fuse element;

the fuse element is made of a metal wiring layer and is fusable by laser irradiation; and

the fuse element includes;

a fusable metal part where the laser irradiation is applied so that the fusable metal part is cut; and

a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.