Semiconductor device
First Claim
Patent Images
1. A semiconductor device, comprising:
- a fuse element made of a metal wiring layer, the fuse element being fusable by laser irradiation;
wherein the fuse element includes;
a fusable metal part where the laser irradiation is applied so that the fusable metal part is cut; and
a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.
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Accused Products
Abstract
A semiconductor device includes a fuse element made of a metal wiring layer, the fuse element being fusable by laser irradiation; wherein the fuse element includes: a fusable metal part where the laser irradiation is applied so that the fusable metal part is cut; and a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.
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Citations
10 Claims
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1. A semiconductor device, comprising:
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a fuse element made of a metal wiring layer, the fuse element being fusable by laser irradiation;
wherein the fuse element includes;
a fusable metal part where the laser irradiation is applied so that the fusable metal part is cut; and
a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device, comprising:
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a splitting resistance circuit configured to obtain a voltage output by voltage splitting using two or more resistance elements and to adjust the voltage output by cutting a fuse element;
wherein the fuse element is made of a metal wiring layer and is fusable by laser irradiation; and
the fuse element includes;
a fusable metal part where laser irradiation is applied so that the fusable metal part is cut; and
a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.
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9. A semiconductor device, comprising:
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a splitting resistance circuit configured to split an input voltage and supply a split voltage;
a standard voltage generation circuit configured to supply a standard voltage; and
a voltage detection circuit having a comparator configured to compare the split voltage from the splitting resistance circuit and the standard voltage from the standard voltage generation circuit;
wherein the splitting resistance circuit obtains a voltage output by voltage splitting using two or more resistance element and adjusts the voltage output by cutting a fuse element;
the fuse element is made of metal wiring layer and fusable by laser irradiation; and
the fuse element includes;
a fusable metal part where laser irradiation is applied so that the fusable metal part is cut; and
a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.
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10. A semiconductor device, comprising:
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an output driver configured to control output of an input voltage;
a splitting resistance circuit configured to split an output voltage and supply a split voltage;
a standard voltage generation circuit configured to supply a standard voltage; and
a constant voltage generation circuit having a comparator configured to compare the split voltage from the splitting resistance circuit and the standard voltage from the standard voltage generation circuit so as to control operation of the output driver based on the result of comparison;
wherein the splitting resistance circuit obtains a voltage output by voltage splitting using two or more resistance element and adjusts the voltage output by cutting a fuse element;
the fuse element is made of a metal wiring layer and is fusable by laser irradiation; and
the fuse element includes;
a fusable metal part where the laser irradiation is applied so that the fusable metal part is cut; and
a periphery metal part arranged around the fusable metal part and optically surrounding the fusable metal part.
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Specification