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Method for enhancing growth of semipolar (A1,In,Ga,B)N via metalorganic chemical vapor deposition

  • US 20070218655A1
  • Filed: 01/19/2007
  • Published: 09/20/2007
  • Est. Priority Date: 01/20/2006
  • Status: Active Grant
First Claim
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1. A method for enhancing growth of a device-quality planar semipolar nitride semiconductor thin film comprising:

  • (a) depositing a semipolar nitride semiconductor thin film on an (Al,In,Ga)N nucleation or buffer layer comprising at least some indium.

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