Method for enhancing growth of semipolar (A1,In,Ga,B)N via metalorganic chemical vapor deposition
First Claim
1. A method for enhancing growth of a device-quality planar semipolar nitride semiconductor thin film comprising:
- (a) depositing a semipolar nitride semiconductor thin film on an (Al,In,Ga)N nucleation or buffer layer comprising at least some indium.
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Abstract
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
26 Citations
14 Claims
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1. A method for enhancing growth of a device-quality planar semipolar nitride semiconductor thin film comprising:
(a) depositing a semipolar nitride semiconductor thin film on an (Al,In,Ga)N nucleation or buffer layer comprising at least some indium. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for growing device-quality planar semipolar nitride semiconductor thin films, comprising:
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(a) loading a substrate into a reactor;
(b) heating the substrate under a flow comprising at least one of nitrogen, hydrogen and ammonia;
(c) depositing an InxGa1−
xN nucleation layer on the heated substrate;
(d) depositing a semipolar nitride semiconductor thin film on the InxGa1−
xN nucleation layer; and
(e) cooling the substrate under a nitrogen overpressure. - View Dependent Claims (13)
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14. A planar semipolar nitride semiconductor thin film comprising semipolar nitride deposited on a nucleation layer comprising indium.
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