SEMICONDUCTOR-PROCESSING APPARATUS WITH ROTATING SUSCEPTOR
First Claim
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1. An apparatus for deposition thin film on a target, comprising:
- a reaction space;
a susceptor having multiple target-supporting areas thereon and disposed inside the reaction space for placing multiple targets each on the target-supporting areas, said susceptor being movable between an upper position and a lower position in its axial direction and being rotatable around its axis when at the upper position; and
multiple compartments for processing divided by partition walls which each extend radially from a central axis of the multiple compartments, said multiple compartments being disposed inside the reaction space over the susceptor with a gap such that the susceptor can continuously rotate at the upper position for film deposition on the targets without contacting the partition walls, said multiple compartments being configured to operate different processes in the compartments simultaneously while the susceptor on which the targets are placed is rotating at the upper position.
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Abstract
An apparatus for depositing thin film on a processing target includes: a reaction space; a susceptor movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, wherein when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in a susceptor-rotating direction of the susceptor.
182 Citations
37 Claims
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1. An apparatus for deposition thin film on a target, comprising:
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a reaction space; a susceptor having multiple target-supporting areas thereon and disposed inside the reaction space for placing multiple targets each on the target-supporting areas, said susceptor being movable between an upper position and a lower position in its axial direction and being rotatable around its axis when at the upper position; and multiple compartments for processing divided by partition walls which each extend radially from a central axis of the multiple compartments, said multiple compartments being disposed inside the reaction space over the susceptor with a gap such that the susceptor can continuously rotate at the upper position for film deposition on the targets without contacting the partition walls, said multiple compartments being configured to operate different processes in the compartments simultaneously while the susceptor on which the targets are placed is rotating at the upper position. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An apparatus for depositing thin film on a processing target, comprising:
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a reaction space; a susceptor for placing multiple processing targets thereon, said susceptor being movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, wherein when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in a susceptor-rotating direction of the susceptor. - View Dependent Claims (19)
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20. A method of processing semiconductor targets, comprising:
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placing multiple semiconductor targets each on target-supporting areas provide on a susceptor disposed inside a reaction space; rotating the susceptor around its axis at an upper position where multiple compartments for processing divided by partition walls each extending radially from a central axis of the multiple compartments are disposed over the susceptor with a gap such that the susceptor continuously rotates at the upper position for film deposition on the targets without contacting the partition walls; and creating processing conditions in each compartment independently and simultaneously while the susceptor on which the targets are placed is continuously rotating at the upper position, thereby processing the targets. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification