Method of forming a carbon polymer film using plasma CVD
First Claim
1. A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus, which comprises the steps of:
- vaporizing a hydrocarbon-containing liquid monomer (Cα
Hβ
Xγ
, wherein α and
β
are natural numbers of 5 or more;
γ
is an integer including zero;
X is O, N or F) having a boiling point of about 20°
C. to about 350°
C.;
introducing said vaporized gas into a CVD reaction chamber inside which a substrate is placed; and
forming a hydrocarbon-containing polymer film on said substrate by plasma polymerization of said gas.
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Abstract
A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.
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Citations
16 Claims
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1. A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus, which comprises the steps of:
-
vaporizing a hydrocarbon-containing liquid monomer (Cα
Hβ
Xγ
, wherein α and
β
are natural numbers of 5 or more;
γ
is an integer including zero;
X is O, N or F) having a boiling point of about 20°
C. to about 350°
C.;
introducing said vaporized gas into a CVD reaction chamber inside which a substrate is placed; and
forming a hydrocarbon-containing polymer film on said substrate by plasma polymerization of said gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification