PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

• US 20070221294A1
• Filed: 03/26/2007
• Published: 09/27/2007
• Est. Priority Date: 03/27/2006
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: SASAKI, Masaru
• Granted Patent: US 8,006,640 B2
• Time in Patent Office: Days
• US Class Current: 148/222
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0223 formation by oxidation, e.g. oxidation of the substrate
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02247 formation by nitridation, e.g. nitridation of the substrate
• CPC Class Codes: H01L 21/02252 formation by plasma treatment, e.g. plasma oxidation of the substrate after treatment of an insulating film by plasma H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/31662 of silicon in uncombined form
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

A plasma processing apparatus includes: a process container configured to accommodate a target object and hold a vacuum therein for performing a plasma process; a worktable configured to place the target object thereon inside the process container; a planar antenna including a plurality of slots and configured to supply microwaves into the process container; a gas feed mechanism configured to supply a process gas into the process container; and a top plate disposed opposite the worktable, the top plate being set at a position separated from the target object placed on the worktable by a distance of 20 mm or more and 100 mm or less.

Claims

1. A plasma processing apparatus comprising:

a process container configured to accommodate a target object and hold a vacuum therein for performing a plasma process;

a worktable configured to place the target object thereon inside the process container;

a planar antenna including a plurality of slots and configured to supply microwaves into the process container;

a gas feed mechanism configured to supply a process gas into the process container; and

a top plate disposed opposite the worktable,

the top plate being set at a position separated from the target object placed on the worktable by a distance of 20 mm or more and 100 mm or less.

2. The plasma processing apparatus according to claim 1, wherein the top plate is set at a position separated from the target object by a distance of 20 mm or more and 80 mm or less.

3. The plasma processing apparatus according to claim 1, further comprising a support portion that extends inward inside the process container and supports the top plate.

4. The plasma processing apparatus according to claim 3, wherein the top plate includes a projecting portion formed thereon to cover the support portion.

5. The plasma processing apparatus according to claim 4, wherein the projecting portion has an extending length of 20 mm or more.

6. The plasma processing apparatus according to claim 1, wherein a plasma having an electron temperature of 1.2 eV or less is generated between the target object and the top plate.

7. The plasma processing apparatus according to claim 1, wherein the worktable has a surface covered with quartz.

8. A plasma processing method comprising:

preparing a plasma processing apparatus comprising a process container configured to accommodate a target object and hold a vacuum therein for performing a plasma process, a worktable configured to place the target object thereon inside the process container, a planar antenna including a plurality of slots and configured to supply microwaves into the process container, a gas feed mechanism configured to supply a process gas into the process container, and a top plate disposed opposite the worktable, the top plate being set at a position separated from the target object placed on the worktable by a distance of 20 mm or more and 100 mm or less;

placing the target object on the worktable;

supplying the process gas into the process container;

supplying microwaves into the process container, thereby generating plasma having an electron temperature of 1.2 eV or less; and

performing a plasma process on the target object by use of the plasma.

9. The plasma processing method according to claim 8, wherein the top plate is set at a position separated from the target object by a distance of 20 mm or more and 80 mm or less.

10. The plasma processing method according to claim 8, wherein the target object includes a silicon surface, the plasma is oxygen-containing plasma, and the plasma process is an oxidation process applied to the silicon surface of the target object.

11. The plasma processing method according to claim 10, wherein the target object includes a gate electrode with a poly-crystalline silicon layer, and the plasma process is an oxidation process applied to a sidewall of the poly-crystalline silicon layer.

12. The plasma processing method according to claim 10, wherein the process gas contains at least a rare gas, oxygen gas, and hydrogen gas.

13. The plasma processing method according to claim 10, wherein the plasma process is arranged to use a gas pressure of 1.33 to 133.33 Pa inside the process container.

14. The plasma processing method according to claim 13, wherein the plasma process is arranged to use a gas pressure of 1.33 to 66.66 Pa inside the process container.

15. The plasma processing method according to claim 8, wherein the target object includes a silicon surface, the plasma is nitrogen-containing plasma, and the plasma process is a nitridation process applied to the silicon surface of the target object.

16. The plasma processing method according to claim 15, wherein the plasma process is arranged to use a gas pressure of 1.33 to 133.3 Pa inside the process container.

17. A storage medium that stores a program for execution on a computer to control a plasma processing apparatus, the program, when executed by the computer, controlling the plasma processing apparatus to perform a plasma processing method,

wherein the apparatus comprises a process container configured to accommodate a target object and hold a vacuum therein for performing a plasma process, a worktable configured to place the target object thereon inside the process container, a planar antenna including a plurality of slots and configured to supply microwaves into the process container, a gas feed mechanism configured to supply a process gas into the process container, and a top plate disposed opposite the worktable, the top plate being set at a position separated from the target object placed on the worktable by a distance of 20 mm or more and 100 mm or less, and

wherein the plasma processing method comprises placing the target object on the worktable, supplying the process gas into the process container, supplying microwaves into the process container, thereby generating plasma having an electron temperature of 1.2 eV or less, and performing a plasma process on the target object by use of the plasma.

18. A plasma processing apparatus for performing a plasma process on a target object, the apparatus comprising:

a process container configured to accommodate the target object and hold a vacuum therein for performing the plasma process;

a worktable configured to place the target object thereon inside the process container;

a planar antenna including a plurality of slots and configured to supply microwaves into the process container;

a gas feed mechanism configured to supply a process gas into the process container;

a top plate disposed above and opposite the worktable, and set at a position separated from the target object placed on the worktable by a distance of 20 mm or more and 100 mm or less; and

a control section configured to control the apparatus to generate microwave-excited plasma with a high density inside the process container and perform the plasma process at a process pressure of 1.33 Pa to 66.66 Pa.

19. The plasma processing apparatus according to claim 18, wherein the top plate is set at a position separated from the target object by a distance of 20 mm or more and 80 mm or less.

20. The plasma processing apparatus according to claim 18, further comprising a support portion that extends inward inside the process container and supports the top plate.

21. The plasma processing apparatus according to claim 20, wherein the top plate includes a projecting portion formed thereon to cover the support portion.

22. The plasma processing apparatus according to claim 21, wherein the projecting portion has an extending length of 20 mm or more.