PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM
First Claim
1. A plasma processing apparatus comprising:
- a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in the processing space;
a first electrode that is disposed in said substrate processing chamber and is connected to a radio frequency power source; and
a second electrode that has an exposed portion exposed to said processing space and is electrically insulated from said substrate processing chamber and said first electrode, wherein said second electrode is connected to a DC power source.
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Accused Products
Abstract
A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.
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Citations
25 Claims
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1. A plasma processing apparatus comprising:
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a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in the processing space;
a first electrode that is disposed in said substrate processing chamber and is connected to a radio frequency power source; and
a second electrode that has an exposed portion exposed to said processing space and is electrically insulated from said substrate processing chamber and said first electrode, wherein said second electrode is connected to a DC power source. - View Dependent Claims (2, 3, 4, 5)
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6. A plasma processing method for a plasma processing apparatus having a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in the processing space, a first electrode that is disposed in the substrate processing chamber and is connected to a radio frequency power source, and a second electrode that has an exposed portion exposed to the processing space and is electrically insulated from the substrate processing chamber and the first electrode, the method comprising:
a DC voltage application step of applying a DC voltage to the second electrode. - View Dependent Claims (7, 8, 9, 10)
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11. A computer-readable storage medium storing a program for causing a computer to implement a plasma processing method for a plasma processing apparatus having a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in the processing space, a first electrode that is disposed in the substrate processing chamber and is connected to a radio frequency power source, and a second electrode that has an exposed portion exposed to the processing space and is electrically insulated from the substrate processing chamber and the first electrode, the method comprising:
a DC voltage application step of applying a DC voltage to the second electrode.
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12. A plasma processing apparatus comprising:
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a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in said processing space;
a first electrode that is disposed in said substrate processing chamber and is connected to a radio frequency power source; and
a second electrode that has an exposed portion exposed to said processing space and is electrically insulated from said substrate processing chamber and said first electrode, wherein the substrate has an inorganic film and an organic film formed thereon, when plasma processing is being carried out on the inorganic film on the substrate, a potential difference between said processing space and said second electrode is set to a value at which said exposed portion of said second electrode is sputtered by plasma produced in said processing space, and when plasma processing is being carried out on the organic film on the substrate, the potential difference between said processing space and said second electrode is set to a value lower than the value of the potential difference for when the plasma processing is being carried out on the inorganic film. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A plasma processing method for a plasma processing apparatus having a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in the processing space, a first electrode that is disposed in the substrate processing chamber and is connected to a radio frequency power source, and a second electrode that has an exposed portion exposed to the processing space and is electrically insulated from the substrate processing chamber and the first electrode, the substrate having an inorganic film and an organic film formed thereon, the method comprising:
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an inorganic film processing step of carrying out plasma processing on the inorganic film on the substrate; and
an organic film processing step of carrying out plasma processing on the organic film on the substrate, wherein in said inorganic film processing step, a potential difference between the processing space and the second electrode is set to a value at which the exposed portion of the second electrode is sputtered by plasma produced in the processing space, and in said organic film processing step, the potential difference between the processing space and the second electrode is set to a value lower than the value of the potential difference for when the plasma processing is being carried out on the inorganic film. - View Dependent Claims (20, 21, 22, 23, 24)
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25. A computer-readable storage medium storing a program for causing a computer to implement a plasma processing method for a plasma processing apparatus having a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in the processing space, a first electrode that is disposed in the substrate processing chamber and is connected to a radio frequency power source, and a second electrode that has an exposed portion exposed to the processing space and is electrically insulated from the substrate processing chamber and the first electrode, the substrate having an inorganic film and an organic film formed thereon, the method comprising:
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an inorganic film processing step of carrying out plasma processing on the inorganic film on the substrate; and
an organic film processing step of carrying out plasma processing on the organic film on the substrate, wherein in said inorganic film processing step, a potential difference between the processing space and the second electrode is set to a value at which the exposed portion of the second electrode is sputtered by plasma produced in the processing space, and in said organic film processing step, the potential difference between the processing space and the second electrode is set to a value lower than the value of the potential difference for when the plasma processing is being carried out on the inorganic film.
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Specification