Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process

• US 20070221620A1
• Filed: 03/22/2006
• Published: 09/27/2007
• Est. Priority Date: 03/22/2006
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Axcelis Technologies Incorporated
• Inventors: Sakthivel, Palanikumaran, Becknell, Alan, Buckley, Thomas
• Granted Patent: US 7,381,651 B2
• Time in Patent Office: Days
• US Class Current: 216/59
• CPC Class Codes: G01N 21/73 using plasma burners or torches
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: H01J 37/32972 Spectral analysis
• CPC Class Codes: H01L 21/31138 by dry-etching

Abstract

Processes for monitoring the levels of oxygen and/or nitrogen in a substantially oxygen and nitrogen-free plasma ashing process generally includes monitoring the plasma using optical emission. An effect produced by the low levels of oxygen and/or nitrogen species present on other species generally abundant in the plasma is monitored and correlated to amounts of oxygen and nitrogen present in the plasma. This so-called “effect detection” process monitors perturbations in the spectra specifically associated with species other than nitrogen and/or oxygen due to the presence of trace amounts of oxygen and/or nitrogen species and is used to quantitatively determine the amount of oxygen and/or nitrogen at a sensitivity on the order of 1 part per million and potentially 1 part per billion.

Claims

1. A process for monitoring oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process of a substrate, the process comprising:

forming reactive species by exposing a plasma gas composition to an energy source to form a plasma substantially free from nitrogen species and oxygen species;

monitoring optical emission signals specifically associated with one or more major components of the plasma gas composition; and

correlating perturbations in the monitored optical emission signals affected by the presence of oxygen and/or nitrogen species in the plasma gas composition to a specific amount of the oxygen and/or nitrogen species in the plasma.

2. The process according to claim 1, wherein the one or more major components of the plasma gas composition consists essentially of hydrogen-bearing gas and a noble gas.

3. The process according to claim 2, wherein the noble gas is helium.

4. The process according to claim 1, wherein correlating the perturbations in the emission signals comprises monitoring changes in a ratio of a hydrogen (H or H₂) emission signal to a helium emission signal affected by different amounts of the oxygen and/or nitrogen species in the plasma.

5. The process according to claim 1, wherein correlating the perturbations in the emission signals comprises monitoring changes in a ratio of a hydrogen radical (H) emission signal to a molecular hydrogen (H₂) emission signal or to a helium (He) emission signal affected by different amounts of the oxygen and/or nitrogen species in the plasma.

6. The process according to claim 1, wherein the substrate comprises a carbon containing insulating layer having a dielectric constant less than 3.0.

7. The process according to claim 1, wherein correlating the perturbations in the emission signals comprises monitoring changes in a broadband spectrum free of any major emission signal peaks as a function of oxygen and/or nitrogen in the plasma.

8. The process according to claim 1, further comprising maintaining the amount of the oxygen species during the substantially oxygen and nitrogen free plasma ashing process at about 5 parts per million to about 15 parts per million and the amount of the nitrogen species at less than about 1 part per million, except when a source for the oxygen species is shut off.

9. A process for monitoring oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process of a substrate, the process comprising:

monitoring a ratio of optical emission signals specifically associated with a ratio of major components of the plasma gas composition in the presence of a fixed amount of oxygen and in the absence of the fixed amount of oxygen; and

calculating a ratio of the ratios during the substantially oxygen and nitrogen-free plasma ashing process and correlating an amount of oxygen and nitrogen species in the plasma from the model curve using the ratio of the ratios.

10. The process of claim 9, wherein the major components of the plasma gas composition are helium and hydrogen.

11. The process according to claim 9, wherein the ratio of major components in the plasma is H/He.

12. The process according to claim 9, wherein the ratio of major components in the plasma is H₂/He.

13. The process according to claim 9, wherein the ratio of major components in the plasma is H/H₂.

14. The process according to claim 9, further comprising maintaining the amount of the oxygen species during the substantially oxygen and nitrogen free plasma ashing process at about 5 parts per million to about 15 parts per million and the amount of the nitrogen species at less than about 1 part per million, except when a source for the oxygen species is shut off.

15. A process for monitoring nitrogen and/or oxygen species at levels less than 100 ppm in substantially oxygen and/or nitrogen free plasmas, the process comprising:

measuring spectral perturbations produced by the oxygen and/or nitrogen species present at levels less than 100 ppm in the substantially oxygen and/or nitrogen free plasma on other species that define major components of the plasma; and

correlating the spectral perturbation affected by the presence of the oxygen and/or nitrogen species in the plasma gas composition to a specific amount of oxygen and nitrogen in the plasma.

16. The process of claim 15, wherein the substantially oxygen and/or nitrogen free plasma is formed from a gas mixture comprising hydrogen and helium.

17. The process of claim 15, further comprising maintaining the amount of the oxygen during the substantially oxygen and nitrogen free plasma ashing process at about 5 parts per million to about 15 parts per million and the amount of the nitrogen at less than about 1 part per million, except when a source for the oxygen species is shut off.

18. A process for detecting contamination levels of nitrogen and oxygen in a gas mixture comprising helium and hydrogen, the process comprising:

generating a plasma with the gas mixture;

monitoring optical emission signals specifically associated with hydrogen and helium species in the plasma; and

correlating perturbations in the monitored optical emission signals affected by the presence of oxygen and/or nitrogen species in the plasma gas composition to a specific amount of the oxygen and/or nitrogen species in the plasma.

19. The process of claim 18, wherein correlating the perturbations in the optical emission signals comprises monitoring changes in a ratio of the hydrogen (H or H₂) emission signal to the helium emission signal affected by different amounts of the oxygen and/or nitrogen species in the plasma.