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Diode with Lead Terminal for Solar Cell

  • US 20070221919A1
  • Filed: 05/19/2005
  • Published: 09/27/2007
  • Est. Priority Date: 05/19/2004
  • Status: Active Grant
First Claim
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1. A diode with lead terminals for use as a bypass diode connected in parallel to a cell string in which m solar cell cells (m is a positive integer of 2 or more) are connected in series via a conductor or as a reverse-current preventive diode connected in series to n said cell strings (n is a positive integer of 1 or more), comprising, an N terminal having an almost square-shaped, plate-like conductive portion of uniform thickness of 0.8 mm or more, at each end of which a thin part is formed, said portion of uniform thickness being an N substrate part, and said thin part at one end being an N thin part and said thin part at the other end being an N connecting wire receiving part, and the under surface of the N substrate part and the under surface of the N thin part forming the same plane, a P terminal having an almost square-shaped, plate-like conductive portion as thick as the N substrate part, at each end of which a thin part is formed, said portion of uniform thickness being a P substrate part, and said thin part at one end being a P thin part, said thin part at the other end being a P connecting wire receiving part, and the upper surface of the P substrate part and the upper surface of the P thin part forming the same plane, and a flat plate-shaped diode chip with a pn connection structure in which a flat plate-shaped P-type semiconductor is connected to a flat plate-shaped N-type semiconductor, wherein the electrode surface of the N-type semiconductor of said diode chip is connected to the upper surface of the N thin part of the N terminal and the electrode surface of the P-type semiconductor of said diode chip is connected to the under surface of the P thin part;

  • and in the state where said diode chip is connected, the overlapped portion of the N thin part, the diode chip, and the P thin part has almost the same thickness that that of the N substrate part, and the total of the plane area of the N substrate part and that of the P substrate part is 200 mm2 or more.

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