Group III nitride semiconductor thin film and group III semiconductor light emitting device

• US 20070221948A1
• Filed: 03/20/2007
• Published: 09/27/2007
• Est. Priority Date: 03/20/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group), University of Tokushima
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group), University of Tokushima
• Inventors: Yoshiki, Naoi, Shiro, Sakai, Choi, Rak
• Application Number:
  US11/725,547
• Publication Number:
  US 20070221948A1
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

A group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same. The group III nitride semiconductor thin film includes a substrate with a concave and convex portions formed thereon; a buffer layer formed on the substrate and made of a group III nitride; and an epitaxial growth layer formed on the buffer layer and made of (11-20) plane gallium nitride. The group III nitride light emitting device includes the group III nitride semiconductor thin film. The present invention allows a high quality a-plane group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same.

Claims

1. A group III nitride semiconductor thin film comprising:

a substrate with a plurality of concave and convex portions formed thereon;

a buffer layer formed on the substrate and made of a group III nitride; and

an epitaxial growth layer formed on the buffer layer and made of (11-20) plane gallium nitride.

2. The group III nitride semiconductor thin film according to claim 1, wherein the buffer layer comprises AlInN.

3. The group III nitride semiconductor thin film according to claim 1, wherein the concave and convex portions of the substrate comprise a plurality of stripe shaped ridges with a plurality of grooves.

4. The group III nitride semiconductor thin film according to claim 3, wherein each of the ridges has a width of 0.001 to 1 mm, each of the groove has a width of 0.001 to 1 mm and a depth of 0.01 to 1 μ

m.

5. The group III nitride semiconductor thin film according to claim 1, wherein the concave and convex portions are formed on a plane in (1-100) direction of gallium nitride, in a direction inclined by 30°

about (1-100) direction, in a direction inclined by 60°

about (1-100) direction or in direction perpendicular to (1-100) direction, each of the convex portions has a width of 0.001 to 1 mm, and each of the concave portions has a depth of 0.01 to 1 μ

m.

6. The group III nitride semiconductor thin film according to claim 5, wherein the concave and convex portions are inclined by ±

5°

about (1-100) direction of gallium nitride.

7. The group III nitride semiconductor thin film according to claim 1, wherein the substrate comprises a (1-102) plane sapphire substrate.

8. The group III nitride semiconductor thin film according to claim 1, wherein the substrate comprises a material selected from the group consisting of MgO, LiGaO₃, LiAlO₃, SiC and Si.

9. A group III nitride semiconductor light emitting device comprising the group III nitride semiconductor thin film described in claim 1.

10. A group III nitride semiconductor thin film comprising:

a substrate with a concave and convex portions formed thereon;

a buffer layer formed on the substrate and made of a group III nitride;

a middle layer formed on the buffer layer, the middle layer comprising a first layer made of a metal and a second layer made of nitrogen, the first and second layers repeatedly stacked for at least two times; and

an epitaxial growth layer formed on the middle layer and made of (11-20) plane gallium nitride.

11. The group III nitride semiconductor thin film according to claim 10, wherein the middle layer comprises Al/In/Ga/N.

12. The group III nitride semiconductor thin film according to claim 10, wherein the buffer layer comprises AlInN.

13. The group III nitride semiconductor thin film according to claim 10, wherein the concave and convex portions of the substrate comprise a plurality of stripe shaped ridges with a plurality of grooves.

14. The group III nitride semiconductor thin film according to claim 13, wherein each of the ridges has a width of 0.001 to 1 mm, each of the grooves has a width of 0.001 to 1 mm and a depth of 0.01 to 1 μ

m.

15. The group III nitride semiconductor thin film according to claim 10, wherein the concave and convex portions are formed in (1-100) direction of gallium nitride, in a direction inclined by 30°

about (1-100) direction, in a direction inclined by 60°

about (1-100) direction or in direction perpendicular to (1-100) direction, each of the convex portions has a width of 0.001 to 1 mm, and each of the concave portions has a depth of 0.01 to 1 μ

m.

16. The group III nitride semiconductor thin film according to claim 15, wherein the concave and convex portions are inclined by ±

5°

about (1-100) direction of gallium nitride.

17. The group III nitride semiconductor thin film according to claim 10, wherein the substrate comprises a (1-102) plane sapphire substrate.

18. The group III nitride semiconductor thin film according to claim 10, wherein the substrate comprises a material selected from the group consisting of MgO, LiGaO₃, LiAlO₃, SiC and Si.

19. A group III nitride semiconductor light emitting device comprising the group III nitride semiconductor thin film described in claim 10.