Forming of the periphery of a schottky diode with MOS trenches
First Claim
1. A method for forming a component of TMBS type having its periphery formed of a trench with insulated walls filled with a conductor, comprising the steps of:
- depositing on a semiconductor substrate a thick layer of a first insulating material;
depositing a thin layer of a second material;
simultaneously digging the peripheral trench and the trenches of the component into the stacking of layers of second and first materials as well as into an upper portion of the substrate, all the trenches having a same width;
isotropically etching the first material to remove the portions of the thick layer of the first material between two trenches, whereby the thin layer of the second material only remains in place beyond the peripheral trench and forms a cap overhanging a recess;
forming a thin insulating layer on the surface of the portions of the semiconductor layer exposed by the etching step;
depositing a layer of a conductive material to fill the trenches and said recess; and
etching the layer of the conductive material and the underlying thin insulating layer to expose the surface of said semiconductor layer between two trenches and maintain the conductive material in the trenches and said recess.
1 Assignment
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Accused Products
Abstract
A method for forming a component of TMBS type having its periphery formed of a trench with insulated walls filled with a conductor, including the steps of depositing on a semiconductor substrate a thick layer of a first insulating material and a thin layer of a second material; simultaneously digging a peripheral trench and the trenches of the component; isotropically etching the first material so that a cap overhanging a recess remains; forming a thin insulating layer; and filling the trenches and said recess with a conductive material.
13 Citations
53 Claims
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1. A method for forming a component of TMBS type having its periphery formed of a trench with insulated walls filled with a conductor, comprising the steps of:
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depositing on a semiconductor substrate a thick layer of a first insulating material;
depositing a thin layer of a second material;
simultaneously digging the peripheral trench and the trenches of the component into the stacking of layers of second and first materials as well as into an upper portion of the substrate, all the trenches having a same width;
isotropically etching the first material to remove the portions of the thick layer of the first material between two trenches, whereby the thin layer of the second material only remains in place beyond the peripheral trench and forms a cap overhanging a recess;
forming a thin insulating layer on the surface of the portions of the semiconductor layer exposed by the etching step;
depositing a layer of a conductive material to fill the trenches and said recess; and
etching the layer of the conductive material and the underlying thin insulating layer to expose the surface of said semiconductor layer between two trenches and maintain the conductive material in the trenches and said recess. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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- 9. A TMBS type component, having a periphery formed of a trench with insulated walls filled with a conductor, wherein the trench forming the periphery exhibits a width which is uniform in transverse cross-section view and equal to the width of the component trenches, and is at a constant distance from an opening in a field oxide.
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11. An integrated circuit comprising:
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a semiconductor substrate;
a semiconductor region disposed adjacent to the semiconductor substrate, and a plurality of trenches in the semiconductor region, each trench being substantially equal in width, each trench being spaced from an adjacent trench by a separation distance, the separation distance between each trench being substantially equal, each trench being coated with an insulator material and substantially filled with conductor material. - View Dependent Claims (12, 13, 14, 15)
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16. A method for manufacturing an integrated circuit comprising:
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providing a semiconductor substrate;
forming a semiconductor region disposed adjacent to the semiconductor substrate;
forming a relatively thick material on the semiconductor region;
forming a relatively thin material on the relatively thick material;
forming a plurality of trenches in the semiconductor region, the plurality of trenches comprising all of the trenches in the semiconductor region, each trench being substantially equal in width; and
processing the circuit further to form the integrated circuit. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. An integrated circuit comprising:
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a semiconductor substrate;
a semiconductor region disposed adjacent to the semiconductor substrate;
a peripheral trench and a plurality of component trenches located in the semiconductor region, the peripheral and component trenches being substantially equal in width, with spacings between the trenches being substantially equal, and an insulator material coating the peripheral and component trenches, and a conductor material disposed within the peripheral and component trenches. - View Dependent Claims (33, 34, 35, 36)
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37. A method for manufacturing an integrated circuit comprising:
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providing a semiconductor substrate;
forming a semiconductor region disposed adjacent to the semiconductor substrate;
forming a relatively thick material on the semiconductor region;
forming a relatively thin material on the relatively thick material;
simultaneously forming a peripheral trench and a plurality of component trenches into the relatively thin and relatively thick materials and into an upper portion of the semiconductor region; and
processing the circuit further to form the integrated circuit. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53)
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Specification