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Method of Fabricating Light Emitting Device and Thus-Fabricated Light Emitting Device

  • US 20070224714A1
  • Filed: 04/13/2005
  • Published: 09/27/2007
  • Est. Priority Date: 04/27/2004
  • Status: Active Grant
First Claim
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1. A method of fabricating a light emitting device obtaining a light emitting device by dicing a light emitting device wafer having a light emitting layer section based on a double heterostructure in which a first-conductivity-type cladding layer, an active layer and an second-conductivity-type cladding layer, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦

  • x≦

    1, 0≦

    y≦

    1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and a GaP transparent semiconductor layer stacked on said light emitting layer section as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of said GaP transparent semiconductor layer.

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