Method of forming carbon polymer film using plasma CVD
First Claim
1. A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus, which comprises:
- vaporizing a hydrocarbon-containing liquid monomer (Cα
Hβ
Xγ
, wherein α and
β
are natural numbers of 5 or more;
γ
is an integer including zero;
X is O, N or F) having a boiling point of about 20°
C. to about 350°
C. which is not substituted by a vinyl group or an acetylene group;
introducing said vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and
forming a hydrocarbon-containing polymer film on said substrate by plasma polymerization of said gas and controlling an extinction coefficient at 193 nm and a mechanical hardness of the forming hydrocarbon-containing polymer film at 0.38 or less and 0.5 GPa or higher, respectively, as a function of a flow rate of the CO2 gas or H2 gas.
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Abstract
A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.
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Citations
40 Claims
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1. A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus, which comprises:
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vaporizing a hydrocarbon-containing liquid monomer (Cα
Hβ
Xγ
, wherein α and
β
are natural numbers of 5 or more;
γ
is an integer including zero;
X is O, N or F) having a boiling point of about 20°
C. to about 350°
C. which is not substituted by a vinyl group or an acetylene group;
introducing said vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and
forming a hydrocarbon-containing polymer film on said substrate by plasma polymerization of said gas and controlling an extinction coefficient at 193 nm and a mechanical hardness of the forming hydrocarbon-containing polymer film at 0.38 or less and 0.5 GPa or higher, respectively, as a function of a flow rate of the CO2 gas or H2 gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus, which comprises the steps of:
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placing a semiconductor device substrate in a CVD reaction chamber;
vaporizing a hydrocarbon-containing liquid monomer (Cα
Hβ
Xγ
, wherein α and
β
are natural numbers of 5 or more;
γ
is an integer including zero;
X is O, N or F) having a boiling point of about 20°
C. to about 350°
C.;
introducing said vaporized gas and CO2 gas or H2 gas into the CVD reaction chamber inside which the substrate is placed; and
forming a hard mask comprising a hydrocarbon-containing polymer film on said substrate by plasma polymerization of said gas and controlling an extinction coefficient at 193 nm and a mechanical hardness of the forming hydrocarbon-containing polymer film at 0.38 or less and 0.5 GPa or higher, respectively, as a function of a flow rate of the CO2 gas or H2 gas. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification