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SEMICONDUCTOR PROCESSING WITH A REMOTE PLASMA SOURCE FOR SELF-CLEANING

  • US 20070227554A1
  • Filed: 06/05/2007
  • Published: 10/04/2007
  • Est. Priority Date: 01/18/2000
  • Status: Abandoned Application
First Claim
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1. A method of cleaning a chemical vapor deposition (CVD) reaction chamber with cleaning gas provided through a remote plasma discharge chamber, comprising:

  • dissociating cleaning gas within the remote plasma discharge chamber, wherein said dissociated cleaning gas is exposed to an anodized aluminum alloy wall of the remote plasma discharge chamber;

    supplying activated species from the remote plasma discharge chamber to the reaction chamber through a piping;

    opening a valve on the piping after conducting a CVD reaction and prior to supplying activated species, wherein opening a valve comprises withdrawing a valve body completely from a path to form an opening substantially as wide as internal surfaces of the piping; and

    removing adhered deposits from CVD reactions on a wall of the reaction chamber.

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