SYSTEMS AND METHODS FOR PRODUCING WHITE-LIGHT LIGHT EMITTING DIODES
First Claim
Patent Images
1. A vertical light-emitting diode (LED) structure, comprising:
- a metal substrate deposited adjacent to a p-GaN layer;
an active region for emitting light coupled to the p-GaN layer;
an n-GaN layer coupled to the active region; and
a phosphor layer coupled to the n-GaN layer.
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Abstract
A vertical light emitting diode (LED) includes a metal substrate; a p-electrode coupled to the metal substrate; a p-contact coupled to the p-electrode; a p-GaN portion coupled to the p electrode; an active region coupled to the p-GaN portion; an n-GaN portion coupled to the active region; and a phosphor layer coupled to the n-GaN.
94 Citations
20 Claims
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1. A vertical light-emitting diode (LED) structure, comprising:
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a metal substrate deposited adjacent to a p-GaN layer;
an active region for emitting light coupled to the p-GaN layer;
an n-GaN layer coupled to the active region; and
a phosphor layer coupled to the n-GaN layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A vertical light-emitting diode (LED) structure, comprising:
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a metal substrate deposited adjacent to a p-GaN layer;
an active region for emitting light coupled to the p-GaN layer;
an n-GaN layer coupled to the active region;
a first phosphor layer coupled to the n-GaN layer; and
a second phosphor layer coupled to the first phosphor layer. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A vertical light-emitting diode (LED) structure, comprising:
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a metal substrate deposited adjacent to a p-GaN layer;
an active region for emitting light coupled to the p-GaN layer;
an n-GaN layer coupled to the active region;
a first phosphor layer coupled to the n-GaN layer; and
a second phosphor layer coupled to the first phosphor layer, wherein the first phosphor layer has a phosphor composition that is photosensitive to a different color than a phosphor composition of the second phosphor layer.
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Specification