MONOLITHIC INTEGRATED CIRCUIT OF A FIELD-EFFECT SEMICONDUCTOR DEVICE AND A DIODE
First Claim
1. A monolithic integrated circuit of a field-effect semiconductor device and a Schottky diode, comprising:
- (a) a main semiconductor region having a major surface;
(b) a source on the major surface of the main semiconductor region;
(c) a drain on the major surface of the main semiconductor region spaced from the source;
(d) gate means interposed between the source and the drain on the major surface of the main semiconductor region; and
(e) a Schottky electrode formed on the major surface of the main semiconductor region in Schottky contact therewith in order to provide a Schottky diode in combination with the main semiconductor region, the Schottky electrode being positioned away from the source across at least the gate means and electrically coupled to the source.
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Accused Products
Abstract
A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.
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Citations
14 Claims
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1. A monolithic integrated circuit of a field-effect semiconductor device and a Schottky diode, comprising:
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(a) a main semiconductor region having a major surface; (b) a source on the major surface of the main semiconductor region; (c) a drain on the major surface of the main semiconductor region spaced from the source; (d) gate means interposed between the source and the drain on the major surface of the main semiconductor region; and (e) a Schottky electrode formed on the major surface of the main semiconductor region in Schottky contact therewith in order to provide a Schottky diode in combination with the main semiconductor region, the Schottky electrode being positioned away from the source across at least the gate means and electrically coupled to the source. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A monolithic integrated circuit of a normally-off field-effect semiconductor device and a Schottky diode, comprising:
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(a) a main semiconductor region having a major surface; (b) a source on the major surface of the main semiconductor region; (c) a drain on the major surface of the main semiconductor region spaced from the source; (d) first insulating means on the major surface of the main semiconductor region and between the source and the drain; (e) a carrier storage on the first insulating means, the carrier storage being capable of accepting and storing carriers; (f) second insulating means on the carrier storage; (g) a gate on the second insulating means, the carrier storage having carriers stored therein to such an extent that the source and the drain are held electrically disconnected from each other even without application of a bias voltage to the gate; and (h) a Schottky electrode formed on the major surface of the main semiconductor region in Schottky contact therewith in order to provide a Schottky diode in combination with the main semiconductor region, the Schottky electrode being positioned away from the source across at least the gate and electrically coupled to the source. - View Dependent Claims (10, 11, 12, 13, 14)
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Specification