Nonvolatile semiconductor memory device
First Claim
1. A nonvolatile semiconductor memory device comprising:
- a semiconductor layer including a channel formation region formed between a pair of impurity regions which are apart from each other;
a first insulating layer over the channel formation region;
a charge accumulation layer over the channel formation region with the first insulating layer interposed therebetween;
a second insulating layer over the charge accumulation storage layer; and
a control gate over the charge accumulation layer with the second insulating layer interposed therebetween, wherein the charge accumulation layer comprises a germanium compound that is insulative.
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Abstract
It is an object of the present invention to provide a nonvolatile semiconductor memory device which has superior writing characteristics and electric charge retention characteristics. In addition, it is an object of the present invention to provide a nonvolatile semiconductor memory device in which a writing voltage can be reduced. The nonvolatile semiconductor memory device includes a semiconductor region with a channel formation region formed between a pair of impurity regions which are formed to be apart from each other; and a first insulating layer, a charge accumulation layer, a second insulating layer, and a control gate are formed in a location which is a top layer portion of the semiconductor region and which roughly overlaps with the channel formation region. The charge accumulation layer is insulative and is formed as a layer in which electric charge can be trapped.
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Citations
17 Claims
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1. A nonvolatile semiconductor memory device comprising:
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a semiconductor layer including a channel formation region formed between a pair of impurity regions which are apart from each other;
a first insulating layer over the channel formation region;
a charge accumulation layer over the channel formation region with the first insulating layer interposed therebetween;
a second insulating layer over the charge accumulation storage layer; and
a control gate over the charge accumulation layer with the second insulating layer interposed therebetween, wherein the charge accumulation layer comprises a germanium compound that is insulative. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A nonvolatile semiconductor memory device comprising:
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a semiconductor layer including a channel formation region formed between a pair of impurity regions which are apart from each other;
a first insulating layer over the channel formation region;
a charge accumulation layer over the channel formation region with the first insulating layer interposed therebetween;
a second insulating layer over the charge accumulation layer; and
a control gate over the charge accumulation layer with the second insulating layer interposed therebetween, wherein the charge accumulation layer comprises a germanium compound that is insulative and particles. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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Specification